A-site doped SrTiO3 is considered as a promising substitute for traditional anodic metals in solid oxide fuel cells (SOFCs). In this study, we present the reactivity of La0.2Sr0.25Ca0.45TiO3 (LCSTO), La0.2Sr0.7TiO3 (LSTO), and SrTiO3 (STO) toward H2 by operando ambient pressure NEXAFS spectroscopy and theoretical spectra simulation with FDMNES code. The samples were synthesized by MBE (molecular beam epitaxy), hydrothermal, and modified-Pechini routes. We found that the reducibility of the samples depends not only on their stoichiometry but also on the morphology, which is determined by the synthetic method. The results of these experiments give insight into the reducibility of Ti4+ in perovskites as well as the opportunity to further optimize the synthesis of these materials to obtain the best performance for SOFC applications.
In the field of hydrogen production, MoS2 demonstrates good catalytic properties for the hydrogen evolution reaction (HER) which improve when doped with metal cations. However, while the role of sulfur atoms as active sites in the HER is largely reported, the role of metal atoms (i.e. molybdenum or the dopant cations) has yet to be studied in depth. To understand the role of the metal dopant, we study MoS2 thin films doped with Co and Mn ions. We identify the contribution of the electronic bands of the Mn and Co dopants to the integral valence band of the material using in situ resonant photoemission measurements. We demonstrate that Mn and Co dopants act differently: Mn doping favors the shift of the S–Mo hybridized band towards the Fermi level, while in the case of Co doping it is the less hybridized Co band that shifts closer to the Fermi level. Doping with Mn increases the effectiveness of S as the active site, thus improving the HER, while doping with Co introduces the metallic site of Co as the active site, which is less effective in improving HER properties. We therefore clarify the role of the dopant cation in the electronic structure determining the active site for hydrogen adsorption/desorption. Our results pave the way for the design of efficient materials for hydrogen production via the doping route, which can be extended to different catalytic reactions in the field of energy applications.
Hybrid elastic and spin waves hold promises for energy-efficient and versatile generation and detection of magnetic signals, with potentially long coherence times. Here we report on the combined elastic and magnetic dynamics in a one-dimensional magnetomechanical crystal composed of an array of magnetic nanostripes. Phononic and magnonic modes are impulsively excited by an optical ultrafast trigger and their decay is monitored by time-resolved magneto-optical Kerr effect. Complementary Brillouin light scattering measurements and micromagnetic simulations concur in a unified picture, in which the strength and degree of mixing of coherent and dissipative coupling of the quasiparticles are determined quantitatively.
The doping of metal oxides is an interesting route to increase catalyst activity and lower activation temperatures in H2 dissociation to replace Pt in catalysts for electrochemical devices. In this process, the roles of both the matrix and dopant cations are fundamental to understanding and designing more efficient catalysts. In this work, we have investigated the reduction process in pure and doped CeO2 films. We followed the oxidation states of Ce and dopants (Cu and Fe) during H2 exposure at ambient pressure by combining X-ray absorption spectroscopy and gas chromatography on 5 nm films in the temperature range of 300–620 K. We have observed that Cu doping (at concentrations of 5 and 14 at. %) promotes the ceria reduction, while the addition of Fe seems to have a limited impact on the oxide chemical reactivity only at low temperatures. Moreover, thanks to the chemical sensitivity of operando X-ray absorption spectroscopy, we were able to follow simultaneously the evolution of Ce and Cu oxidation states during the reaction, which has permitted to identify two distinct reduction processes taking place above and below 500 K. These measurements show that at low temperatures, the H2 dissociation takes place at the Cu1+ sites, thus explaining the higher reactivity of the Cu-doped samples. The described mechanism can help in the design of Pt-free catalysts with enhanced performances.
We present a study of a sub-nanometre interlayer of crystalline silicon nitride at the Ni/Si interface. We performed transmission electron microscopy measurements complemented by energy dispersive X-ray analysis to investigate to what extent the nitride layer act as a barrier against atom diffusion. The results show that discontinuous silicide areas can form just below the nitride layer, whose composition is compatible with that of the nickel disilicide. The Ni–Si reaction is tentatively attributed to the thermal strain suffered by the interface during the deposition of Ni at low temperature.
VO2 is one of the most studied vanadium oxides because it undergoes a reversible metal-insulator transition (MIT) upon heating with a critical temperature of around 340 K. One of the most overlooked aspects of VO2 is the band’s anisotropy in the metallic phase when the Fermi level is crossed by two bands: π* and d||. They are oriented perpendicularly in one respect to the other, hence generating anisotropy. One of the parameters tuning MIT properties is the unbalance of the electron population of π* and d|| bands that arise from their different energy position with respect to the Fermi level. In systems with reduced dimensionality, the electron population disproportion is different with respect to the bulk leading to a different anisotropy. Investigating such a system with a band-selective spectroscopic tool is mandatory. In this manuscript, we show the results of the investigation of a single crystalline 8 nm VO2/TiO2(101) film. We report on the effectiveness of linearly polarized resonant photoemission (ResPES) as a band-selective technique probing the intrinsic anisotropy of VO2.
We report on the growth and characterization of epitaxial YBa2Cu3O7−δ (YBCO) complex oxide thin films and related heterostructures exclusively by Pulsed Laser Deposition (PLD) and using first harmonic Nd:Y3Al5O12 (Nd:YAG) pulsed laser source (λ = 1064 nm). High-quality epitaxial YBCO thin film heterostructures display superconducting properties with transition temperature ∼ 80 K. Compared with the excimer lasers, when using Nd:YAG lasers, the optimal growth conditions are achieved at a large target-to-substrate distance d. These results clearly demonstrate the potential use of the first harmonic Nd:YAG laser source as an alternative to the excimer lasers for the PLD thin film community. Its compactness as well as the absence of any safety issues related to poisonous gas represent a major breakthrough in the deposition of complex multi-element compounds in form of thin films.
Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources—both lasers can be independently used within the deposition chambers—a large number of different materials—ranging from oxides to metals, to selenides, and others—can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders’ manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures.
V2O3 presents a complex interrelationship between the metal–insulator transition and the structural rhombohedral-monoclinic one in temperature, as a function of sample thickness. Whilst in bulk V2O3 the two transitions coincide on the temperature scale, at 15 nm thickness a fully independent Mott-like transition occurs at lower temperature, with no corresponding structural changes perhaps related to epitaxial strain. It is therefore of relevance to investigate the thin and ultrathin film growth to pinpoint the chemical, electronic and structural phase phenomenology and the role of the interface with the substrate. Here we present results on the thickness dependent properties of V2O3 from 1 nm up to 40 nm thick as grown on c-plane Al2O3 substrates by exploiting variable sampling depth probes. The surface morphology of stoichiometric ultra-thin V2O3 layers evolves from islands-like to continuous flat film with thickness, with implications on the overall properties.
The possibility of modifying the ferromagnetic response of a multiferroic heterostructure via fully optical means exploiting the photovoltaic/photostrictive properties of the ferroelectric component is an effective method for tuning the interfacial properties. In this study, the effects of 405 nm visible-light illumination on the ferroelectric and ferromagnetic responses of (001) Pb(Mg1/3Nb2/3)O3-0.4PbTiO3 (PMN-PT)/Ni heterostructures are presented. By combining electrical, structural, magnetic, and spectroscopic measurements, how light illumination above the ferroelectric bandgap energy induces a photovoltaic current and the photostrictive effect reduces the coercive field of the interfacial magnetostrictive Ni layer are shown. Firstly, a light-induced variation in the Ni orbital moment as a result of sum-rule analysis of x-ray magnetic circular dichroic measurements is reported. The reduction of orbital moment reveals a photogenerated strain field. The observed effect is strongly reduced when polarizing out-of-plane the PMN-PT substrate, showing a highly anisotropic photostrictive contribution from the in-plane ferroelectric domains. These results shed light on the delicate energy balance that leads to sizeable light-induced effects in multiferroic heterostructures, while confirming the need of spectroscopy for identifying the physical origin of interface behavior.
The generation and control of surface acoustic waves (SAWs) in a magnetic material are objects of an intense research effort focused on magnetoelastic properties, with fruitful ramifications in spin-wave-based quantum logic and magnonics. We implement a transient grating setup to optically generate SAWs also seeding coherent spin waves via magnetoelastic coupling in ferromagnetic media. In this work we report on SAW-driven ferromagnetic resonance (FMR) experiments performed on polycrystalline Ni thin films in combination with time-resolved Faraday polarimetry, which allows extraction of the value of the effective magnetization and of the Gilbert damping. The results are in full agreement with measurements on the very same samples from standard FMR. Higher-order effects due to parametric modulation of the magnetization dynamics, such as down-conversion, up-conversion, and frequency mixing, are observed, testifying the high sensitivity of this technique.
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the combination of material synthesis and photoelectron spectroscopy, we demonstrate a genuine Mott transition undressed of any symmetry breaking side effects in the thin films of V2O3. In particular and in contrast with the bulk V2O3, we unveil the purely electronic dynamics approaching the metal–insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature is lower than the one reported for the bulk. Our findings are fundamental in demonstrating the universal benchmarks of a genuine nonsymmetry breaking Mott transition, extendable to a large array of correlated quantum systems, and hold promise of exploiting the metal–insulator transition by implementing V2O3 thin films in devices.
The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La1–xSrxMnO3 (0.15 ≤ x ≤ 0.45) thin films deposited using the molecular beam epitaxy technique on 4° vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques. The structural characterizations evidence a significant shift in the LSMO (002) peak to the higher diffraction angles owing to the increase in Sr doping concentrations in thin films. The nature of the LSMO Mn mixed-valence state was estimated from X-ray photoemission spectroscopy together with the relative changes in the Mn L2,3 edges observed in X-ray absorption spectroscopy (XAS), both strongly affected by doping. CTM4XAS simulations at the XAS Mn L2,3 edges reveal the combination of epitaxial strain, and different MnO6 crystal field splitting give rise to a peak at ∼641 eV. The observed changes in the occupancy of the eg and the t2g orbitals as well as their binding energy positions toward the Fermi level with hole doping are discussed. The room-temperature magnetic properties were probed at the end by circular dichroism.
The occurrence of oxygen-driven metal–insulator-transition (MIT) in SrNbO3 (SNO) thin films epitaxially grown on (110)-oriented DyScO3 has been reported. SNO films are fabricated by the pulsed laser deposition technique at different partial O2 pressure to vary the oxygen content and their structural, optical, and transport properties are probed. SNO unit cell has been found to shrink vertically as the oxygen content increases but keeping the epitaxial matching with the substrate. The results of Fourier-transform infra-red spectroscopy show that highly oxygenated SNO samples (i.e., grown at high oxygen pressure) show distinct optical conductivity behavior with respect to oxygen deficient films, hence demonstrating the insulating character of the formers with respect to those fabricated with lower pressure conditions. Tailoring the optical absorption and conductivity of strontium niobate epitaxial films across the MIT will favor novel applications of this material.
The understanding of the origin of a two-dimensional electron gas (2DEG) at the surface of anatase TiO2 remains a challenging issue. In particular, in TiO2 ultra-thin films, it is extremely difficult to distinguish intrinsic effects, due to the physics of the TiO2, from extrinsic effects, such as those arising from structural defects, dislocations, and the presence of competing phases at the film/substrate interface. It is, therefore, mandatory to unambiguously ascertain the structure of the TiO2/substrate interface. In this work, by combining high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), density functional theory calculations, and multislice image simulations, we have investigated the nature of strainless anatase TiO2 thin films grown on LaAlO3 substrate. In particular, the presence of oxygen vacancies in anatase TiO2 has been proved to stabilize the formation of an extra alloy layer, Ti2AlO4, by means of interface rearrangement. Our results, therefore, elucidate why the growth of anatase TiO2 directly on LaAlO3 substrate has required the deposition of a TiOx extra-layer to have a 2DEG established, thus confirming the absence of a critical thickness for the TiO2 to stabilize a 2DEG at its surface. These findings provide fundamental insights on the underlying formation mechanism of the 2DEG in TiO2/LAO hetero-interfaces to engineer the 2DEG formation in anatase TiO2 for tailored applications.
The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La0.7Sr0.3MnO3 (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.
Hybridization of electronic states and orbital symmetry in transition metal oxides are generally considered key ingredients in the description of both their electronic and magnetic properties. In the prototypical case of La0.65Sr0.35MnO3 (LSMO), a landmark system for spintronics applications, a description based solely on Mn 3d and O 2p electronic states is reductive. We thus analyzed elemental and orbital distributions in the LSMO valence band through a comparison between density functional theory calculations and experimental photoelectron spectra in a photon energy range from soft to hard x rays. We reveal a number of hidden contributions, arising specifically from La 5p, Mn 4s, and O 2s orbitals, considered negligible in previous analyses; our results demonstrate that all these contributions are significant for a correct description of the valence band of LSMO and of transition metal oxides in general.
We investigated the relationship between ferromagnetism and metallicity in strained La0.67Ca0.33MnO3 films grown on lattice-mismatched NdGaO3 (001) by means of spectroscopic techniques directly sensitive to the ferromagnetic state, to the band structure, and to the chemical state of the atoms. In this system, the ferromagnetic metallic (FMM) phase spatially coexists with an insulating one in most of the phase diagram. First, the observation of an almost 100% spin polarization of the photoelectrons at the Fermi level in the fundamental state provides direct evidence of the half-metallicity of the FMM phase, a result that has been previously observed through direct probing of the valence band only on unstrained, phase-homogeneous La0.67Sr0.33MnO3. Second, the spin polarization results to be correlated with the occupancy at the Fermi level for all the investigated temperature regimes. These outcomes show that the half-metallic behavior predicted by a double-exchange model persists even in phase-separated manganites. Moreover, the correlation between metallicity and ferromagnetic alignment is confirmed by X-ray magnetic circular dichroism, a more bulk-sensitive technique, allowing one to explain transport properties in terms of the conduction through aligned FMM domains.
Materials and heterostructures that exhibit coupling between elastic and magnetic degrees of freedom are of both fundamental and technological interest. In particular, they have great potential for novel energy-efficient spintronic devices because acoustic waves can generate coherent and long-living spin waves through inverse magnetostriction, which consists in variations in the magnetization due to lattice deformations. As optical methods are versatile, non-invasive and contactless, an all-optical approach has been implemented and applied to study magnetoelastic coupling in a ferromagnetic film on a glass substrate.
The present thesis work was performed at the NFFA-SPRINT facility of IOM-CNR in the Fermi@Elettra hall at Trieste, where I actively contributed to the realization and characterization of an all new experimental setup which is able to combine transient grating spectroscopy with a time-resolved Faraday polarimetry.
Quantum materials are central for the development of novel functional systems that are often based on interface specific phenomena. Fabricating controlled interfaces between quantum materials requires adopting a flexible growth technique capable to synthesize different materials within a single-run deposition process with high control of structure, stoichiometry, and termination. Among the various available thin film growth technologies, pulsed laser deposition (PLD) allows controlling the growth of diverse materials at the level of single atomic layers. In PLD the atomic species are supplied through an ablation process of a stoichiometric target either in form of polycrystalline powders or of a single crystal. No carrier gases are needed in the deposition process. The ablation process is compatible with a wide range of background pressure. We present results of thin-film growth by PLD obtained by using an Nd:YAG infrared pulsed laser source operating at its first harmonics. With respect to the traditional PLD systems—based on excimer KrF UV-lasers—optimal conditions for the growth of thin films and heterostructures are reached at large target-to-substrate distance. Merits and limitations of this approach for growing oxide and non-oxide thin films are discussed. The merits of an Nd:YAG laser to grow very high-quality thin films suggest the possibility of implementing compact in-situ setups e.g. integrated with analytical instrumentation under ultra-high vacuum conditions.
Here, we present an integrated ultra-high vacuum apparatus—named MBE-Cluster —dedicated to the growth and in situ structural, spectroscopic, and magnetic characterization of complex materials. Molecular Beam Epitaxy (MBE) growth of metal oxides, e.g., manganites, and deposition of the patterned metallic layers can be fabricated and in situ characterized by reflection high-energy electron diffraction, low-energy electron diffraction, Auger electron spectroscopy, x-ray photoemission spectroscopy, and azimuthal longitudinal magneto-optic Kerr effect. The temperature can be controlled in the range from 5 K to 580 K, with the possibility of application of magnetic fields H up to ±7 kOe and electric fields E for voltages up to ±500 V. The MBE-Cluster operates for in-house research as well as user facility in combination with the APE beamlines at Sincrotrone-Trieste and the high harmonic generator facility for time-resolved spectroscopy.
We present the results of a photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES) study on high quality, epitaxial SrNbO3 thin films prepared in situ by pulsed laser deposition (PLD). We show that the Fermi surface is composed of three bands mainly due to t(2g) orbitals of Nb 4d, in analogy with the 3d-based perovskite systems. The bulk band dispersion for the conduction and valence states obtained by density functional theory (DFT) is generally consistent with the ARPES data. The small discrepancy in the bandwidth close to the Fermi level seems to result from the interplay of correlation effects and the presence of vacancies. The ARPES results are complemented by soft x-ray photoemission spectroscopy measurements in order to provide indications on the chemical states and the stoichiometry of the material.
Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.
We combine time-resolved pump-probe magneto-optical Kerr effect and photoelectron spectroscopy experiments supported by theoretical analysis to determine the relaxation dynamics of delocalized electrons in half-metallic ferromagnetic manganite La1−xSrxMnO3. We observe that the half-metallic character of La1−xSrxMnO3 determines the timescale of both the electronic phase transition and the quenching of magnetization, revealing a quantum isolation of the spin system in double-exchange ferromagnets extending up to hundreds of picoseconds. We demonstrate the use of time-resolved hard x-ray photoelectron spectroscopy as a unique tool to single out the evolution of strongly correlated electronic states across a second-order phase transition in a complex material.
Converse magnetoelectric coupling in artificial multiferroics is generally modeled through three possible mechanisms: charge transfer, strain mediated effects or ion migration. Here the role played by electrically controlled morphological modifications on the ferromagnetic response of a multiferroic heterostructure, specifically FexMn1−x ferromagnetic films on piezoferroelectric PMN‐PT [001] substrates, is discussed. The substrates present, in correspondence to electrical switching, fully reversible morphological changes at the surface, to which correspond reproducible modifications of the ferromagnetic response of the FexMn1−x films. Topographic analysis by atomic force microscopy shows the formation of surface cracks (up to 100 nm in height) upon application of a sufficiently high positive electric field (up to 6 kV cm−1). The cracks disappear after application of negative electric field of the same magnitude. Correspondingly, in operando X‐ray magnetic circular dichroic spectroscopy at Fe edge in FexMn1−x layers and micro‐MOKE measurements show local variations in the intensity of the dichroic signal and in the magnetic anisotropy as a function of the electrically driven morphological state. This morphologic parameter, rarely explored in literature, directly affects the ferromagnetic response of the system. Its proof of electrically reversible modification of the magnetic response adds a new possibility in the design of electrically controlled magnetic devices.
By performing density functional theory and Green's functions calculations, complemented by x-ray photoemission spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such a system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization, and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are hardly altered by the ferromagnetic overlayer. This could have a deep impact on spin-dependent phenomena observed at this interface, such as spin-to-charge interconversion, which are likely to involve bulk rather than surface Rashba states.
Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of a system, it is fundamental to set a defined anisotropy to the system. Here, we investigate half-metallic La0.67Sr0.33MnO3 thin films by means of vectorial Magneto-Optical Kerr Magnetometry and found that they exhibit pure biaxial magnetic anisotropy at room temperature if grown onto a MgO (001) substrate with a thin SrTiO3 buffer. In this way, we can avoid unwanted uniaxial magnetic anisotropy contributions that may be detrimental for specific applications. The detailed study of the angular evolution of the magnetization reversal pathways and critical fields (coercivity and switching) discloses the origin of the magnetic anisotropy, which is magnetocrystalline in nature and shows fourfold symmetry at any temperature.
The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combining high-resolution angle-resolved photoemission spectroscopy and first principles calculations (with and without spin-orbit coupling), the electronic structure of the rutile binary iridate,
IrO2, is investigated. The detailed study of electronic bands measured on a high-quality single crystalline sample and use of a wide range of photon energy provide a huge improvement over the previous studies. The excellent agreement between theory and experimental results shows that the single-particle DFT description of IrO2 band structure is adequate, without the need of invoking any treatment of correlation effects. Although many observed features point to a 3D nature of the electronic structure, clear surface effects are revealed. The discussion of the orbital character of the relevant bands crossing the Fermi level sheds light on spin-orbit-coupling-driven phenomena in this material, unveiling a spin-orbit-induced avoided crossing, a property likely to play a key role in its large spin Hall effect.
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nanoelectronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence, and supporting density functional theory analysis, of a transition in La0.65Sr0.35MnO3 thin film to a stable ferromagnetic phase, that is induced by the structural and strain properties of the ferroelectric BaTiO3 (BTO) substrate, which can be modified by applying external electric fields. X-ray magnetic circular dichroism measurements on Mn L edges with a synchrotron radiation show, in fact, two magnetic transitions as a function of temperature that correspond to structural changes of the BTO substrate. We also show that ferromagnetism, absent in the pristine condition at room temperature, can be established by electrically switching the BTO ferroelectric domains in the out-of-plane direction. The present results confirm that electrically induced strain can be exploited to control magnetism in multiferroic oxide heterostructures.
The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.
In the rapidly growing field of spintronics, simultaneous control of electronic and magnetic properties is essential, and the perspective of building novel phases is directly linked to the control of tuning parameters, for example, thickness and doping. Looking at the relevant effects in interface-driven spintronics, the reduced symmetry at a surface and interface corresponds to a severe modification of the overlap of electron orbitals, that is, to a change of electron hybridization. Here we report a chemically and magnetically sensitive depth-dependent analysis of two paradigmatic systems, namely La1−xSrxMnO3 and (Ga,Mn)As. Supported by cluster calculations, we find a crossover between surface and bulk in the electron hybridization/correlation and we identify a spectroscopic fingerprint of bulk metallic character and ferromagnetism versus depth. The critical thickness and the gradient of hybridization are measured, setting an intrinsic limit of 3 and 10 unit cells from the surface, respectively, for (Ga,Mn)As and La1−xSrxMnO3, for fully restoring bulk properties.
In this work the experimental uncertainties concerning electron spin polarization (SP) under various realistic measurement conditions are theoretically derived. The accuracy of the evaluation of the SP of the photoelectron current is analysed as a function of the detector parameters and specifications, as well as of the characteristics of the photoexcitation sources. In particular, the different behaviour of single counter or twin counter detectors when the intensity fluctuations of the source are considered have been addressed, leading to a new definition of the SP detector performance. The widely used parameter called the figure of merit is shown to be inadequate for describing the efficiency of SP polarimeters, especially when they are operated with time-structured excitation sources such as free-electron lasers. Numerical simulations have been performed and yield strong implications in the choice of the detecting instruments in spin-polarization experiments, that are constrained in a limited measurement time. Our results are therefore applied to the characteristics of a wide set of state-of-the-art spectroscopy facilities all over the world, and an efficiency diagram for SP experiments is derived. These results also define new mathematical instruments for handling the correct statistics of SP measurements in the presence of source intensity fluctuations.
The recent discovery of hidden spin polarization emerging in bulk electronic states of specific nonmagnetic crystals is a fascinating phenomenon, though hardly explored yet. Here, we study from a theoretical perspective nonmagnetic
BaNiS2, recently suggested to exhibit a giant Rashba-like spin-orbit splitting of the bulk bands, despite the absence of heavy elements. We employ density functional theory and Green's functions calculations to reveal the exact spin textures of both bulk and surface. We predict unambiguous signatures of spin-polarized electronic states at the surface, which reflect the bulk Rashba splitting and which could be experimentally measured with sufficient resolution: this would constitute a clear report of a bulk-Rashba-induced spin splitting at the surface of centrosymmetric crystals.
ULTRASPIN is an apparatus devoted to the measurement of the spin polarization (SP) of electrons ejected from solid surfaces in a UHV environment. It is designed to exploit ultrafast light sources (free electron laser or laser high harmonic generation) and to perform (photo)electron spin analysis by an arrangement of Mott scattering polarimeters that measure the full SP vector. The system consists of two interconnected UHV vessels: one for surface science sample cleaning treatments, e-beam deposition of ultrathin films, and low energy electron diffraction/AES characterization. The sample environment in the polarimeter allows for cryogenic cooling and in-operando application of electric and magnetic fields. The photoelectrons are collected by an electrostatic accelerator and transport lens that form a periaxial beam that is subsequently directed by a Y-shaped electrostatic deflector to either one of the two orthogonal Mott polarimeters. The apparatus has been designed to operate in the extreme conditions of ultraintense single-X-ray pulses as originated by free electron lasers (up to 1 kHz), but it allows also for the single electron counting mode suitable when using statistical sources such as synchrotron radiation, cw-laser, or e-gun beams (up to 150 kcps).
We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO3 (STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.