Solid oxide photoelectrochemical cells (SOPECs) with inorganic ion-conducting electrolytes provide an alternative solution for light harvesting and conversion. Exploring potential photoelectrodes for SOPECs and understanding their operation mechanisms are crucial for continuously developing this technology. Here, ceria-based thin films were newly explored as photoelectrodes for SOPEC applications. It was found that the photoresponse of ceria-based thin films can be tuned both by Sm-doping-induced defects and by the heating temperature of SOPECs. The whole process was found to depend on the surface electrochemical redox reactions synergistically with the bulk photoelectric effect. Samarium doping level can selectively switch the open-circuit voltages polarity of SOPECs under illumination, thus shifting the potential of photoelectrodes and changing their photoresponse. The role of defect chemistry engineering in determining such a photoelectrochemical process was discussed. Transient absorption and X-ray photoemission spectroscopies, together with the state-of-the-art in operando X-ray absorption spectroscopy, allowed us to provide a compelling explanation of the experimentally observed switching behavior on the basis of the surface reactions and successive charge balance in the bulk.
THORONDOR is a data treatment software with a graphical user interface (GUI) accessible via the browser‐based Jupyter notebook framework. It aims to provide an interactive and user‐friendly tool for the analysis of NEXAFS spectra collected during in situ experiments. The program allows on‐the‐fly representation and quick correction of large datasets from single or multiple experiments. In particular, it provides the possibility to align in energy several spectral profiles on the basis of user‐defined references. Various techniques to calculate background subtraction and signal normalization have been made available. In this context, an innovation of this GUI involves the usage of a slider‐based approach that provides the ability to instantly manipulate and visualize processed data for the user. Finally, the program is characterized by an advanced fitting toolbox based on the lmfit package. It offers a large selection of fitting routines as well as different peak distributions and empirical ionization potential step edges, which can be used for the fit of the NEXAFS rising‐edge peaks. Statistical parameters describing the goodness of a fit such as χ2 or the R‐factor together with the parameter uncertainty distributions and the related correlations can be extracted for each chosen model.
The study of ionic materials on nanometer scale is of great relevance for efficient miniaturized devices for energy applications. The epitaxial growth of thin films can be a valid route to tune the properties of the materials and thus obtain new degrees of freedom in materials design. High crystal quality SmxCe1-xO2-δ films are here reported at high doping level up to x=0.4, thanks to the good lat-tice matching with the (110) oriented NdGaO3 substrate. X-ray diffraction and transmission electron microscopy demonstrate the ordered structural quality and absence of Sm segregation at macroscopic and atomic level, respectively. Therefore, in epitaxial thin films the homogeneous doping can be obtained even with high dopant content not always approachable in bulk form, getting even an improvement of the structural properties. In situ spectroscopic measurements by x-ray photoemission and x-ray absorption show the O 2p band shift towards the Fermi level which can favor the oxygen exchange and vacancy formation on the surface when the Sm doping is increased to x=0.4. X-ray absorption spectroscopy also confirms the absence of ordered oxygen vacancy clusters and further reveals that the 5d eg and t2g states are well separated by the crystal field in the undistorted local structure even in the case of high doping level x=0.4.
Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy, we investigate the growth of 2D vanadium-molybdenum diselenide alloys, VxMo1–xSe2, on highly oriented pyrolytic graphite and unveil their structural, chemical, and electronic integrities via measurements by scanning tunneling microscopy/spectroscopy, synchrotron X-ray photoemission, and X-ray absorption spectroscopy (XAS). Essentially, we found a critical value of x = ∼0.44, below which phase separation occurs and above which a homogeneous metallic phase is favored. Another observation is an effective increase in the density of mirror twin boundaries of constituting MoSe2 in the low V concentration regime (x ≤ 0.05). Density functional theory calculations support our experimental results on the thermal stability of 2D VxMo1–xSe2 alloys and suggest an H phase of the homogeneous alloys with alternating parallel V and Mo strips randomly in-plane stacked. Element-specific XAS of the 2D alloys, which clearly indicates quenched atomic multiplets similar to the case of 2H-VSe2, provides strong evidence for the H phase of the 2D alloys. This work provides a comprehensive understanding of the thermal stability, chemical state, and electronic structure of 2D VxMo1–xSe2 alloys, useful for the future design of 2D electronic devices.
Ti silicates, and in particular Titanium Silicalite‐1 (TS‐1), are nowadays important catalysts for several partial oxidation reactions in the presence of aqueous H 2 O 2 as oxidant. Despite the numerous studies dealing with this material, some fundamental aspects are still unfathomed. In particular, the structure and the catalytic role of defective Ti sites, other than perfect tetrahedral sites recognized as main active species, has not been quantitatively discussed in the literature. In this work, we assess the structural features of defective Ti sites on the basis of electronic spectroscopies outcomes, as interpreted through quantum‐mechanical simulation. We disclose here strong evidences that the most common defective Ti sites, often reported in the TS‐1 literature, are monomeric Ti centers, embedded in the zeolite framework, having a distorted octahedral local symmetry.
Ambient pressure operando soft X-ray absorption spectroscopy (soft-XAS) was applied to study the reactivity of hydroxylated SnO2 nanoparticles towards reducing gases. H2 was first used as a test case, showing that gas phase and surface states can be simultaneously probed: soft-XAS at the O K-edge gains sensitivity towards the gas phase, while at the Sn M4,5-edges tin surface states are explicitly probed. Results obtained by flowing hydrocarbons (CH4 and CH3CHCH2) unequivocally show that these gases react with surface hydroxyl groups to produce water without producing carbon oxides, and release electrons that localize on Sn to eventually form SnO. The partially reduced SnO2-x layer at the surface of SnO2 is readily reoxidised to SnO2 by treating the sample with O2 at mild temperatures (> 200 °C), revealing the nature of “electron sponge” of tin oxide. The experiments, combined with DFT calculations, allowed devising a mechanism for dissociative hydrocarbon adsorption on SnO2, involving direct reduction of Sn sites at the surface via cleavage of C-H bonds, and the formation of methoxy- and/or methyl-tin species at the surface.
Bulk PtSn4 has recently attracted the interest of the scientific community for the presence of electronic states exhibiting Dirac node arcs, enabling possible applications in nanoelectronics. Here, by means of surface-science experiments and density functional theory, we assess its suitability for catalysis by studying the chemical reactivity of the (0 1 0)-oriented PtSn4 surface toward CO, H2O, O2 molecules at room temperature and, moreover, its stability in air. We demonstrate that the catalytic activity of PtSn4 is determined by the composition of the outermost atomic layer. Specifically, we find that the surface termination for PtSn4 crystals cleaved in vacuum is an atomic Sn layer, which is totally free from any CO poisoning. In oxygen-rich environment, as well as in ambient atmosphere, the surface termination is a SnOx skin including SnO and SnO2 in comparable amount. However, valence-band states, including those forming Dirac node arcs, are only slightly affected by surface modifications. The astonishingly beneficial influence of surface oxidation on catalytic activity has been demonstrated by electrocatalytic tests evidencing a reduction of the Tafel slope, from 442 down to 86 mV dec−1, whose origin has been explained by our theoretical model. The use of surface-science tools to tune the chemical reactivity of PtSn4 opens the way toward its effective use in catalysis, especially for hydrogen evolution reaction and oxygen evolution reaction.
The local atomic structure and the magnetic response of Co films intercalated between Graphene and Ir(111) were investigated combining polarized X-ray Absorption Spectroscopy at the Co K edge with Magneto-Optic Kerr Effect. The structural and magnetic evolution upon a 500 °C annealing was evaluated as a function of the film thickness. After the thermal treatment, our thick film (10 monolayers) presented a lower perpendicular magnetic anisotropy (PMA) as well as a reduced average structural disorder. On the other hand, in our thin film (5 monolayers), the annealing enhanced the perpendicular magnetic response and induced a local anisotropy by stretching the Co-Co bonds in the film plane and compressing those outside the plane. Our finding emphasizes the close relationship between the local structure of Co within the film and its magnetic properties.
The mechanisms of CO oxidation on the Mg0.2Co0.2Ni0.2Cu0.2Zn0.2O high entropy oxide were studied by means of operando soft X-ray absorption spectroscopy. We found that Cu is the active metal, and that Cu(II) can be rapidly reduced to Cu(I) by CO when the temperature is larger than 130 °C. Co and Ni do not have any role in this respect. The Cu(II) oxidation state can be easily but slowly recovered by treating the sample in O2 at ca. 250 °C. However, it should be noted that CuO is readily and irreversibly reduced to Cu(I) if treated in CO at T>100 °C. Thus, the main conclusion of this work is that the high configurational entropy of Mg0.2Co0.2Ni0.2Cu0.2Zn0.2O stabilizes the rock-salt structure and permits the oxidation/reduction of Cu to be reversible, thus permitting the catalytic cycle to take place.
Implementation of in-situ and operando experimental set-ups for bridging the pressure gap in characterization techniques based on monitoring of photoelectron emission has made significant achievements at several beamlines at Elettra synchrotron facility. These set-ups are now operational and have been successfully used to address unsolved issues exploring events occurring at solid–gas, solid–liquid and solid-solid interfaces of functional materials. The sections in the article communicate the research opportunities offered by the current set-ups at APE, BACH, ESCAmicroscopy and Nanospectroscopy beamlines and outline the next steps to overcome the present limits.
Palladium ditelluride (PdTe2) is a novel transition‐metal dichalcogenide exhibiting type‐II Dirac fermions and topological superconductivity. To assess its potential in technology, its chemical and thermal stability is investigated by means of surface‐science techniques, complemented by density functional theory, with successive implementation in electronics, specifically in a millimeter‐wave receiver. While water adsorption is energetically unfavorable at room temperature, due to a differential Gibbs free energy of ≈+12 kJ mol−1, the presence of Te vacancies makes PdTe2 surfaces unstable toward surface oxidation with the emergence of a TeO2 skin, whose thickness remains sub‐nanometric even after one year in air. Correspondingly, the measured photocurrent of PdTe2‐based optoelectronic devices shows negligible changes (below 4%) in a timescale of one month, thus excluding the need of encapsulation in the nanofabrication process. Remarkably, the responsivity of a PdTe2‐based millimeter‐wave receiver is 13 and 21 times higher than similar devices based on black phosphorus and graphene in the same operational conditions, respectively. It is also discovered that pristine PdTe2 is thermally stable in a temperature range extending even above 500 K, thus paving the way toward PdTe2‐based high‐temperature electronics. Finally, it is shown that the TeO2 skin, formed upon air exposure, can be removed by thermal reduction via heating in vacuum.
Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.
Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics, while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Through interfacial hybridization with a Co atomic overlayer, a magnetic moment of about 0.4 μB per V atom in ML VSe2 is revealed, approaching values predicted by previous theoretical calculations. Promotion of the ferromagnetism in ML VSe2 is accompanied by its antiferromagnetic coupling to Co and a reduction in the spin moment of Co. In comparison to the absence of this interface-induced ferromagnetism at the Fe/ML MoSe2 interface, these findings at the Co/ML VSe2 interface provide clear proof that the ML VSe2, initially with magnetic disorder, is on the verge of magnetic transition.
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic 2D transition‐metal dichalcogenides (2D‐TMDs). Herein, by means of in situ microscopy and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X‐ray and angle‐resolved photoemission, and X‐ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T‐phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular‐beam epitaxy. Element‐specific X‐ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long‐range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic‐scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D‐TMDs in the search for exotic low‐dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.
Cu2ZnSnS4 (CZTS) nanocrystals (NCs) were produced via hot-injection from metal chloride precursors. A systematic investigation of the influence of synthesis conditions on composition, size and microstructure of CZTS NCs is presented. The results show that the solvent amount (oleylamine) is a key parameter in the synthesis of this quaternary chalcogenide: a low solvent content leads to CZTS NCs with a prominent kesterite phase with the desired composition for use as absorber material in thin film photovoltaic cells. It is also observed that lowering the injection temperature (250 °C) favours formation of CZTS NCs in the wurtzite phase. The effect of different high temperature thermal treatments on the grain growth is also shown: large crystals are obtained with annealing in inert atmosphere, whereas nanocrystalline films are obtained introducing sulphur vapour during the heat treatment. A correlation between the grain dimension and the carbonaceous residues in the final films is investigated. It is shown that the grain growth is hindered by organic residues, amount and nature of which depend on the heat treatment atmosphere. In fact, oleylamine is removed by a complex pyrolytic process, which is affected by the presence of sulphur vapour. The latter favours the stability of oleylamine residuals against its non-oxidative release.
Materials exhibiting nodal‐line fermions promise superb impact on technology for the prospect of dissipationless spintronic devices. Among nodal‐line semimetals, the ZrSiX (X = S, Se, Te) class is the most suitable candidate for such applications. However, the surface chemical reactivity of ZrSiS and ZrSiSe has not been explored yet. Here, by combining different surface‐science tools and density functional theory, it is demonstrated that the formation of ZrSiS and ZrSiSe surfaces by cleavage is accompanied by the washing up of the exotic topological bands, giving rise to the nodal line. Moreover, while the ZrSiS has a termination layer with both Zr and S atoms, in the ZrSiSe surface, reconstruction occurs with the appearance of Si surface atoms, which is particularly prone to oxidation. It is demonstrated that the chemical activity of ZrSiX compounds is mostly determined by the interaction of the Si layer with the ZrX sublayer. A suitable encapsulation for ZrSiX should not only preserve their surfaces from interaction with oxidative species, but also provide a saturation of dangling bonds with minimal distortion of the surface.
In order to enable the use of the prototypical 2D‐layered MoS2 for spintronics, its integration with ferromagnetic layers is mandatory. By employing interface‐sensitive 57Fe conversion electron Mössbauer spectroscopy (CEMS), hard X‐ray photoelectron spectroscopy (HAXPES), and transmission electron microscopy (TEM), the chemical, structural, and magnetic properties of the Fe/2D‐MoS2 interface are investigated. CEMS shows that out of the first 1 nm of Fe in direct contact with 2D‐MoS2, about half of the Fe atoms keeps the un‐perturbed Fe local environment, partly in regions where the original 2D‐layered structure of MoS2 is preserved as shown by TEM. The remaining reacting Fe atoms exclusively bond with Mo, with the majority of them being characterized by a ferromagnetic environment and the rest coordinating in a paramagnetic Fe‐Mo configuration. The preferential Fe bonding with Mo is corroborated by HAXPES analysis. The results provide detailed insight into the link between the bonding configuration and the interfacial magnetism at the Fe/2D‐MoS2 heterojunction.
The design and characterization of a HHG source conceived for Time and Angle Resolved PhotoElectron Spectroscopy (TR-ARPES) experiments are presented. The harmonics are selected through a grating monochromator with an innovative design able to provide XUV radiation for two distinct TR-ARPES setups.
The superconducting properties of Sr1–xLaxCuO2 thin films are strongly affected by sample preparation procedures, including the annealing step, which are not always well controlled. We have studied the evolution of Cu L2,3 and O K edge x-ray absorption spectra (XAS) of Sr1–xLaxCuO2 thin films as a function of reducing annealing, both qualitatively and quantitatively. By using linearly polarized radiation, we are able to identify the signatures of the presence of apical oxygen in the as-grown sample and its gradual removal as a function of duration of 350 °C Ar annealing performed on the same sample. Even though the as-grown sample appears to be hole doped, we cannot identify the signature of the Zhang-Rice singlet in the O K XAS, and it is extremely unlikely that the interstitial excess oxygen can give rise to a superconducting or even a metallic ground state. XAS and x-ray linear dichroism analyses are, therefore, shown to be valuable tools to improving the control over the annealing process of electron doped superconductors.
Interfaces play a crucial role in the study of novel phenomena emerging at heterostructures comprising metals and functional oxides. For this reason, attention should be paid to the interface chemistry, which can favor the interdiffusion of atomic species and, under certain conditions, lead to the formation of radically different compounds with respect to the original constituents. In this work, we consider Cr/
BaTiO3 heterostructures grown on SrTiO3 (100) substrates. Chromium thin films (1–2 nm thickness) are deposited by molecular beam epitaxy on the
BaTiO3 layer, and subsequently annealed in vacuum at temperatures ranging from 473 to 773 K. A disordered metallic layer is detected for annealing temperatures up to 573 K, whereas, at higher temperatures, we observe a progressive oxidation of chromium, which we relate to the thermally activated migration of oxygen from the substrate. The chromium oxidation state is +3 and the film shows a defective rocksalt structure, which grows lattice matched on the underlying BaTiO3 layer. One out of every three atoms of chromium is missing, producing an uncommon tetragonal phase with Cr2O3 stoichiometry. Despite the structural difference with respect to the ordinary corundum α-Cr2O3 phase, we demonstrate both experimentally and theoretically that the electronic properties of the two phases are, to a large extent, equivalent.
We investigate the solvatochromic effect of a Fe-based spin-crossover (SCO) compound via ambient pressure soft X-ray absorption spectroscopy (AP-XAS) and atomic force microscopy (AFM). AP-XAS provides the direct evidence of the spin configuration for the Fe(II) 3d states of the SCO material upon in situ exposure to specific gas or vapor mixtures; concurrent changes in nanoscale topography and mechanical characteristics are revealed via AFM imaging and AFM-based force spectroscopy, respectively. We find that exposing the SCO material to gaseous helium promotes an effective decrease of the transition temperature of its surface layers, while the exposure to methanol vapor causes opposite surfacial and bulk solvatochromic effects. Surfacial solvatochromism is accompanied by a dramatic reduction of the surface layers stiffness. We propose a rationalization of the observed effects based on interfacial dehydration and solvation phenomena.
PtTe2 is a novel transition-metal dichalcogenide hosting type-II Dirac fermions that displays application capabilities in optoelectronics and hydrogen evolution reaction. Here it is shown, by combining surface science experiments and density functional theory, that the pristine surface of PtTe2 is chemically inert toward the most common ambient gases (oxygen and water) and even in air. It is demonstrated that the creation of Te vacancies leads to the appearance of tellurium-oxide phases upon exposing defected PtTe2 surfaces to oxygen or ambient atmosphere, which is detrimental for the ambient stability of uncapped PtTe2-based devices. On the contrary, in PtTe2 surfaces modified by the joint presence of Te vacancies and substitutional carbon atoms, the stable adsorption of hydroxyl groups is observed, an essential step for water splitting and the water–gas shift reaction. These results thus pave the way toward the exploitation of this class of Dirac materials in catalysis.
Interfaces between organic semiconductors and ferromagnetic metals offer intriguing opportunities in the rapidly developing field of organic spintronics. Understanding and controlling the spin-polarized electronic states at the interface is the key toward a reliable exploitation of this kind of systems. Here we propose an approach consisting in the insertion of a two-dimensional magnetic oxide layer at the interface with the aim of both increasing the reproducibility of the interface preparation and offering a way for a further fine control over the electronic and magnetic properties. We have inserted a two-dimensional Cr4O5 layer at the C60/Fe(001) interface and have characterized the corresponding morphological, electronic, and magnetic properties. Scanning tunneling microscopy and electron diffraction show that the film grows well-ordered both in the monolayer and multilayer regimes. Electron spectroscopies confirm that hybridization of the electronic states occurs at the interface. Finally, magnetic dichroism in X-ray absorption shows an unprecedented spin-polarization of the hybridized fullerene states. The latter result is discussed also in light of an ab initio theoretical analysis.
The conduction and optoelectronic properties of transparent conductive oxides can be largely modified by intentional inclusion of dopants over a very large range of concentrations. However, the simultaneous presence of structural defects results in an unpredictable complexity that prevents a clear identification of chemical and structural properties of the final samples. By exploiting the unique chemical sensitivity of Hard X-ray Photoelectron Spectra and Near Edge X-ray Absorption Fine Structure in combination with Density Functional Theory, we determine the contribution to the spectroscopic response of defects in Al-doped ZnO films. Satellite peaks in O1s and modifications at the O K-edge allow the determination of the presence of H embedded in ZnO and the very low concentration of Zn vacancies and O interstitials in undoped ZnO. Contributions coming from substitutional and (above the solubility limit) interstitial Al atoms have been clearly identified and have been related to changes in the oxide stoichiometry and increased oxygen coordination, together with small lattice distortions. In this way defects and doping in oxide films can be controlled, in order to tune their properties and improve their performances.
The knowledge of the picosecond dynamics of the energy level alignment between donor and acceptor materials in organic photovoltaic devices under working conditions is a challenge for fundamental material research. We measured by means of time-resolved Resonant X-ray Photoemission Spectroscopy (RPES) the energy level alignment in ZnPc/C60 films. We employed 800 nm femtosecond laser pulses to pump the system simulating sunlight excitation and X-rays from the synchrotron as a probe. We measured changes in the valence bands due to pump induced modifications of the interface dipole. Our measurements prove the feasibility of time-resolved RPES with high repetition rate sources.
In this work we investigated in detail the effects of nitric acid on the surface chemistry of two carbons, activated by steam and by phosphoric acid, meant to identify the nature and the concentration of the oxidized surface species. To this aim, the oxidized carbons were characterized by means of a large number of complementary techniques, including micro-Raman spectroscopy, N2 physisorption, Boehm titration method, 13C solid state nuclear magnetic resonance, X-ray photoelectron spectroscopy, diffuse reflectance infrared and inelastic neutron scattering spectroscopy. Carboxylic and carboxylate groups are mainly formed, the latter stabilized by the extended conjugation of the π electrons and being more abundant on small and irregular graphitic platelets. We demonstrated that the presence of oxygen-containing groups acts against the palladium dispersion and causes the appearance of an appreciable induction time in hydrogenation reactions. The carbon with more oxygenated surface species (and in particular more carboxylate groups) must be chosen in the hydrogenation of polar substrates, while it is detrimental to the hydrogenation of nonpolar substrates.
The role of trivalent rare-earth dopants on the cerium oxidation state has been systematically studied by in situ photoemission spectroscopy with synchrotron radiation for 10 mol % rare-earth doped epitaxial ceria films. It was found that dopant rare-earths with smaller ionic radius foster the formation of Ce3+ by releasing the stress strength induced by the cation substitution. With a decrease of the dopant ionic radius from La3+ to Yb3+, the out-of-plane axis parameter of the crystal lattice decreases without introducing macroscopic defects. The high crystal quality of our films allowed us to comparatively study both the ionic conductivity and surface reactivity ruling out the influence of structural defects. The measured increase in the activation energy of films and their enhanced surface reactivity can be explained in terms of the dopant ionic radius effects on the Ce4+ → Ce3+ reduction as a result of lattice relaxation. Such findings open new perspectives in designing ceria-based materials with tailored properties by choosing suitable cation substitution.
TiO2 is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.
We investigated the influence of surfaces in the formation of different crystal structures of a spin crossover compound, namely [Fe(L)2] (LH: (2-(pyrazol-1-yl)-6-(1H-tetrazol-5-yl)pyridine), which is a neutral compound thermally switchable around room temperature. We observed that the surface induces the formation of two different crystal structures, which exhibit opposite spin transitions, i.e. on heating them up to the transition temperature, one polymorph switches from high spin to low spin and the second polymorph switches irreversibly from low spin to high spin. We attributed this inversion to the presence of water molecules H-bonded to the complex tetrazolyl moieties in the crystals. Thin deposits were investigated by means of polarized optical microscopy, atomic force microscopy, X-ray diffraction, X-ray absorption spectroscopy and micro Raman spectroscopy; moreover the analysis of the Raman spectra and the interpretation of spin inversion were supported by DFT calculations.
Spin-crossover metal complexes are highly promising magnetic molecular switches for prospective molecule-based devices. The spin-crossover molecular photoswitches developed so far operate either at very low temperatures or in the liquid phase, which hinders practical applications. Herein, we present a molecular spin-crossover iron(II) complex that can be switched between paramagnetic high-spin and diamagnetic low-spin states with light at room temperature in the solid state. The reversible photoswitching is induced by alternating irradiation with ultraviolet and visible light and proceeds at the molecular level.
In search for dilute magnetic semiconductors, the magnetic properties at the atomic-scale of Fe atoms incorporated in ZnO, in a concentration range of more than five orders of magnitude from 1 × 10−5 to 2.2 at% have been probed using emission 57Fe Mössbauer spectroscopy on implanted 57Mn and 57Co produced at ISOLDE/CERN. In the ultra-dilute regime (10−5 at%), the system shows isolated paramagnetic Fe3+ ions with a spin–lattice type of relaxation. At higher concentrations (between 0.02 and 0.2 at%) a transition to spin–spin type of relaxation between neighboring Fe3+ is observed, without any signature of magnetic ordering up to 2.2 at%. Despite the many reports of dilute magnetism in 3d-doped ZnO, this atomic level study shows no evidence of any long-range magnetic ordering between isolated Fe atoms incorporated in the ZnO lattice.