Relevance of thermal disorder in the electronic and spin ultrafast dynamics of iron in the low-perturbation regime
G.M. Pierantozzi, A. De Vita, R. Cucini, A.M. Finardi, T. Pincelli, F. Sirotti, J. Fujii, C. Dri, G. Brajnik, R. Sergo, G. Cautero, G. Panaccione, and G. Rossi
Understanding the ultrafast demagnetization of transition metals requires pump-probe experiments sensitive to the time evolution of the electronic, spin, and lattice thermodynamic baths. By means of time-resolved photoelectron energy and spin-polarization measurements in the low-pump-fluence regime on iron, we disentangle the different dynamics of hot electrons and demagnetization in the subpicosecond and picosecond time range. We observe a broadening of the Fermi-Dirac distribution, following the excitation of nonthermal electrons at specific region of the iron valence band. The corresponding reduction of the spin polarization is remarkably delayed with respect to the dynamics of electronic temperature. The experimental results are corroborated with a microscopic 3-temperature model highlighting the role of thermal disorder in the quenching of the average spin magnetic moment, and indicating Elliot-Yafet type spin-flip scattering as the main mediation mechanism, with a spin-flip probability of 0.1 and a rate of energy exchange between electrons and lattice of 2.5Kfs−1.
Our Research
Adv. Funct. Mat., 2301056, (2023)
Formation and Etching of the Insulating Sr-Rich V5+ Phase at the Metallic SrVO3 Surface Revealed by Operando XAS Spectroscopy Characterizations
V. Polewczyk, M. Mezhoud, M. Rath, O. El-Khaloufi, F. Bassato, A. Fouchet, W. Prellier, M. Frégnaux, D. Aureau, L. Braglia, G. Vinai, P. Torelli, U. Lüders
In the search of low cost and more efficient electronic devices, here the properties of SrVO3 transparent conductor oxide (TCO) thin film are investigated, both visible-range optically transparent and highly conductive, it stands as a promising candidate to substitute the standard indium-tin-oxide (ITO) in applications. Its surface stability under water (both liquid and vapor) and other gaseous atmospheres is especially addressed. Through the use of spectroscopy characterizations, X-ray photoemission and operando X-ray absorption measurements, the formation of a thin Sr-rich V5+ layer located at the surface of the polycrystalline SrVO3 film with aging is observed, and for the first time how it can be removed from the surface by solvating in water atmosphere. The surface recovery is associated to an etching process, here spectroscopically characterized in operando conditions, allowing to follow the stoichiometric modification under reaction. Once exposed in oxygen atmosphere, the Sr-rich V5+ layer forms again. The findings improve the understanding of aging effects in perovskite oxides, allowing for the development of functionalized films in which it is possible to control or to avoid an insulating surface layer. This constitutes an important step towards the large-scale use of V-based TCOs, with possible implementations in oxide-based electronics.
Our Research
Nano Lett., (2022)
Disentangling Structural and Electronic Properties in V2O3 Thin Films: A Genuine Nonsymmetry Breaking Mott Transition
F. Mazzola, S.K. Chaluvadi, V. Polewczyk, D. Mondal, J. Fujii, P. Rajak, M. Islam, R. Ciancio, L. Barba, M. Fabrizio, G. Rossi, P. Orgiani, and I. Vobornik
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the combination of material synthesis and photoelectron spectroscopy, we demonstrate a genuine Mott transition undressed of any symmetry breaking side effects in the thin films of V2O3. In particular and in contrast with the bulk V2O3, we unveil the purely electronic dynamics approaching the metal–insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature is lower than the one reported for the bulk. Our findings are fundamental in demonstrating the universal benchmarks of a genuine nonsymmetry breaking Mott transition, extendable to a large array of correlated quantum systems, and hold promise of exploiting the metal–insulator transition by implementing V2O3 thin films in devices.
Our Research
Appl. Sci., 12(3), 1489, (2022)
HAADF STEM and Ab Initio Calculations Investigation of Anatase TiO2/LaAlO3 Heterointerface
M. Islam, P. Rajak, D. Knez, S.K. Chaluvadi, P. Orgiani, G. Rossi, G. Dražić, R. Ciancio
The understanding of the origin of a two-dimensional electron gas (2DEG) at the surface of anatase TiO2 remains a challenging issue. In particular, in TiO2 ultra-thin films, it is extremely difficult to distinguish intrinsic effects, due to the physics of the TiO2, from extrinsic effects, such as those arising from structural defects, dislocations, and the presence of competing phases at the film/substrate interface. It is, therefore, mandatory to unambiguously ascertain the structure of the TiO2/substrate interface. In this work, by combining high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), density functional theory calculations, and multislice image simulations, we have investigated the nature of strainless anatase TiO2 thin films grown on LaAlO3 substrate. In particular, the presence of oxygen vacancies in anatase TiO2 has been proved to stabilize the formation of an extra alloy layer, Ti2AlO4, by means of interface rearrangement. Our results, therefore, elucidate why the growth of anatase TiO2 directly on LaAlO3 substrate has required the deposition of a TiOx extra-layer to have a 2DEG established, thus confirming the absence of a critical thickness for the TiO2 to stabilize a 2DEG at its surface. These findings provide fundamental insights on the underlying formation mechanism of the 2DEG in TiO2/LAO hetero-interfaces to engineer the 2DEG formation in anatase TiO2 for tailored applications.
NFFA Thesis
University of Milan Bachelor's Degree Thesis, (2019)
All-resolved photoemission spectroscopy of Fe(100) and passivated Fe-p(1x1)O surfaces
A.M. Finardi (Supervisors: G. Rossi, I. Vobornik, J. Fujii)
Le proprietà ottiche, elettroniche e magnetiche dei solidi e delle loro superfici dipendono dalla struttura degli stati elettronici entro alcuni eV dal livello di Fermi. I calcoli della struttura elettronica a bande sono efficaci solo nel caso di materiali a bassa interazione elettrone-elettrone (correlazione). L'esperimento e la guida necessaria per lo studio delle proprietà elettroniche dei solidi e delle loro superfici, ed in particolare la spettroscopia di fotoemissione (photoemission spectroscopy - PES) che si basa sulla misura dello spettro energetico degli elettroni emessi da un solido eccitato da un fascio di fotoni monocromatici di energia eccedente la funzione lavoro. La risoluzione dell'angolo di emissione (Angle-resolved photemission spectroscopy - ARPES) permette di avere informazioni sulla legge di dispersione En(k) dello stato elettronico iniziale, mentre la misura del grado di polarizzazione in spin del fascio di elettroni completa il set di numeri quantici, fornendo un dato molto importante per lo studio delle correlazioni elettroniche.
Our Research
Rev. Sci. Instrum., 89, 054101, (2018)
A reaction cell for ambient pressure soft x-ray absorption spectroscopy
C. Castán-Guerrero, D. Krizmancic, V. Bonanni, R. Edla, A. Deluisa, F. Salvador, G. Rossi, G. Panaccione, and P. Torelli
We present a new experimental setup for performing X-ray Absorption Spectroscopy (XAS) in the soft X-ray range at ambient pressure. The ambient pressure XAS setup is fully compatible with the ultra high vacuum environment of a synchrotron radiation spectroscopy beamline end station by means of ultrathin Si3N4 membranes acting as windows for the X-ray beam and seal of the atmospheric sample environment. The XAS detection is performed in total electron yield (TEY) mode by probing the drain current from the sample with a picoammeter. The high signal/noise ratio achievable in the TEY mode, combined with a continuous scanning of the X-ray energies, makes it possible recording XAS spectra in a few seconds. The first results show the performance of this setup to record fast XAS spectra from sample surfaces exposed at atmospheric pressure, even in the case of highly insulating samples. The use of a permanent magnet inside the reaction cell enables the measurement of X-ray magnetic circular dichroism at ambient pressure.
From our users
Langmuir, 34, 3604-3609, (2018)
Opposite Surface and Bulk Solvatochromic Effects in a Molecular Spin-Crossover Compound Revealed by Ambient Pressure X-ray Absorption Spectroscopy
F. Borgatti, P. Torelli, M. Brucale, D. Gentili, G. Panaccione, C. Castan-Guerrero, B. Schäfer, M. Ruben and M. Cavallini
We investigate the solvatochromic effect of a Fe-based spin-crossover (SCO) compound via ambient pressure soft X-ray absorption spectroscopy (AP-XAS) and atomic force microscopy (AFM). AP-XAS provides the direct evidence of the spin configuration for the Fe(II) 3d states of the SCO material upon in situ exposure to specific gas or vapor mixtures; concurrent changes in nanoscale topography and mechanical characteristics are revealed via AFM imaging and AFM-based force spectroscopy, respectively. We find that exposing the SCO material to gaseous helium promotes an effective decrease of the transition temperature of its surface layers, while the exposure to methanol vapor causes opposite surfacial and bulk solvatochromic effects. Surfacial solvatochromism is accompanied by a dramatic reduction of the surface layers stiffness. We propose a rationalization of the observed effects based on interfacial dehydration and solvation phenomena.
From our users
Phys. Chem. Chem. Phys., 19, 29364, (2017)
Spectroscopic identification of the chemical interplay between defects and dopants in Al-doped ZnO
S. Benedetti, I. Valenti, A. di Bona, G. Vinai, C. Castan-Guerrero, S. Valeri, A. Catellani, A. Ruini, P. Torelli and A. Calzolari
The conduction and optoelectronic properties of transparent conductive oxides can be largely modified by intentional inclusion of dopants over a very large range of concentrations. However, the simultaneous presence of structural defects results in an unpredictable complexity that prevents a clear identification of chemical and structural properties of the final samples. By exploiting the unique chemical sensitivity of Hard X-ray Photoelectron Spectra and Near Edge X-ray Absorption Fine Structure in combination with Density Functional Theory, we determine the contribution to the spectroscopic response of defects in Al-doped ZnO films. Satellite peaks in O1s and modifications at the O K-edge allow the determination of the presence of H embedded in ZnO and the very low concentration of Zn vacancies and O interstitials in undoped ZnO. Contributions coming from substitutional and (above the solubility limit) interstitial Al atoms have been clearly identified and have been related to changes in the oxide stoichiometry and increased oxygen coordination, together with small lattice distortions. In this way defects and doping in oxide films can be controlled, in order to tune their properties and improve their performances.
Our Research
J. Phys.: Conf. Ser., 903, 012061, (2017)
Influence of Mn diffusion on IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers
G. Vinai, L. Frangou, C. Castan-Guerrero, V. Bonanni, B. Gobaut, S. Auffret, I.L. Prejbeanu, B. Dieny, V. Baltz and P. Torelli
In this work, we studied the influence of the buffer layer composition on the IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers. By means of magnetometry, x-ray absorption and x-ray photoelectron spectroscopy, we investigated the magnetic and chemical properties of the stacks. We demonstrated a higher diffusion of Mn through the Co layer in the case of a Cu buffer layer. This is consistent with the observation of larger IrMn thickness threshold for the onset of exchange bias.
From our users
Catal. Sci. Technol., 7, 4162, (2017)
The effect of surface chemistry on the performances of Pd-based catalysts supported on activated carbons
A. Lazzarini, R. Pellegrini, A. Piovano, S. Rudić, C. Castan-Guerrero, P. Torelli, M.R. Chierotti, R. Gobetto, C. Lamberti and E. Groppo
In this work we investigated in detail the effects of nitric acid on the surface chemistry of two carbons, activated by steam and by phosphoric acid, meant to identify the nature and the concentration of the oxidized surface species. To this aim, the oxidized carbons were characterized by means of a large number of complementary techniques, including micro-Raman spectroscopy, N2 physisorption, Boehm titration method, 13C solid state nuclear magnetic resonance, X-ray photoelectron spectroscopy, diffuse reflectance infrared and inelastic neutron scattering spectroscopy. Carboxylic and carboxylate groups are mainly formed, the latter stabilized by the extended conjugation of the π electrons and being more abundant on small and irregular graphitic platelets. We demonstrated that the presence of oxygen-containing groups acts against the palladium dispersion and causes the appearance of an appreciable induction time in hydrogenation reactions. The carbon with more oxygenated surface species (and in particular more carboxylate groups) must be chosen in the hydrogenation of polar substrates, while it is detrimental to the hydrogenation of nonpolar substrates.
Our Research
AIP Advances, 5, 127128, (2015)
Magnetoresistance of galfenol-based magnetic tunnel junction
B. Gobaut, G. Vinai, C. Castan-Guerrero, D. Krizmancic, H. Rafaqat, S. Roddaro, G. Rossi, G. Panaccione, M. Eddrief, M. Marangolo, and P. Torelli
The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.
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