VO2 is one of the most studied vanadium oxides because it undergoes a reversible metal-insulator transition (MIT) upon heating with a critical temperature of around 340 K. One of the most overlooked aspects of VO2 is the band’s anisotropy in the metallic phase when the Fermi level is crossed by two bands: π* and d||. They are oriented perpendicularly in one respect to the other, hence generating anisotropy. One of the parameters tuning MIT properties is the unbalance of the electron population of π* and d|| bands that arise from their different energy position with respect to the Fermi level. In systems with reduced dimensionality, the electron population disproportion is different with respect to the bulk leading to a different anisotropy. Investigating such a system with a band-selective spectroscopic tool is mandatory. In this manuscript, we show the results of the investigation of a single crystalline 8 nm VO2/TiO2(101) film. We report on the effectiveness of linearly polarized resonant photoemission (ResPES) as a band-selective technique probing the intrinsic anisotropy of VO2.
From our users
Phys. Rev. Materials, 5, 104403, (2021)
Identification of hidden orbital contributions in the La0.65Sr0.35MnO3 valence band
F. Offi, K. Yamauchi, S. Picozzi, V. Lollobrigida, A. Verna, C. Schlueter, T.-L. Lee, A. Regoutz, D. J. Payne, A. Petrov, G. Vinai, G. M. Pierantozzi, T. Pincelli, G. Panaccione, and F. Borgatti
Hybridization of electronic states and orbital symmetry in transition metal oxides are generally considered key ingredients in the description of both their electronic and magnetic properties. In the prototypical case of La0.65Sr0.35MnO3 (LSMO), a landmark system for spintronics applications, a description based solely on Mn 3d and O 2p electronic states is reductive. We thus analyzed elemental and orbital distributions in the LSMO valence band through a comparison between density functional theory calculations and experimental photoelectron spectra in a photon energy range from soft to hard x rays. We reveal a number of hidden contributions, arising specifically from La 5p, Mn 4s, and O 2s orbitals, considered negligible in previous analyses; our results demonstrate that all these contributions are significant for a correct description of the valence band of LSMO and of transition metal oxides in general.
From our users
J. Elec. Spectr. Rel. Phenom., 146902, (2019)
Operando photoelectron emission spectroscopy and microscopy at Elettra soft X-ray beamlines: From model to real functional systems
M. Amati, V. Bonanni, L. Braglia, F. Genuzio, L. Gregoratti, M. Kiskinova, A. Kolmakov, A. Locatelli, E. Magnano, A.A. Matruglio, T.O. Menteş, S. Nappini, P. Torelli, P. Zeller
Implementation of in-situ and operando experimental set-ups for bridging the pressure gap in characterization techniques based on monitoring of photoelectron emission has made significant achievements at several beamlines at Elettra synchrotron facility. These set-ups are now operational and have been successfully used to address unsolved issues exploring events occurring at solid–gas, solid–liquid and solid-solid interfaces of functional materials. The sections in the article communicate the research opportunities offered by the current set-ups at APE, BACH, ESCAmicroscopy and Nanospectroscopy beamlines and outline the next steps to overcome the present limits.
From our users
J. Vac. Sci. Technol. B, 37, 061209, (2019)
Transparent conductive oxide-based architectures for the electrical modulation of the optical response: A spectroscopic ellipsometry study
M. Sygletou, F. Bisio, S. Benedetti, P. Torelli, A. di Bona, A. Petrov, and M. Canepa
Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.
From our users
OSA Technical Digest, paper EW2B.5, (2018)
A Novel High Order Harmonic Source for Time- and Angle-Resolved Photoemission Experiments
P. Miotti, F. Cilento, R. Cucini, A. De Luisa, A. Fondacaro, F. Frassetto, D. Kopić, D. Payne, A. Sterzi, T. Pincelli, G. Panaccione, F. Parmigiani, G. Rossi, and L. Poletto
The design and characterization of a HHG source conceived for Time and Angle Resolved PhotoElectron Spectroscopy (TR-ARPES) experiments are presented. The harmonics are selected through a grating monochromator with an innovative design able to provide XUV radiation for two distinct TR-ARPES setups.
From our users
J. Phys. Chem. C, 121, 8841–8849, (2017)
Effects of Dopant Ionic Radius on Cerium Reduction in Epitaxial Cerium Oxide Thin Films
N. Yang, P. Orgiani, E. Di Bartolomeo, V. Foglietti, P. Torelli, A.V. Ievlev, G. Rossi, S. Licoccia, G. Balestrino, S.V. Kalinin, C. Aruta
The role of trivalent rare-earth dopants on the cerium oxidation state has been systematically studied by in situ photoemission spectroscopy with synchrotron radiation for 10 mol % rare-earth doped epitaxial ceria films. It was found that dopant rare-earths with smaller ionic radius foster the formation of Ce3+ by releasing the stress strength induced by the cation substitution. With a decrease of the dopant ionic radius from La3+ to Yb3+, the out-of-plane axis parameter of the crystal lattice decreases without introducing macroscopic defects. The high crystal quality of our films allowed us to comparatively study both the ionic conductivity and surface reactivity ruling out the influence of structural defects. The measured increase in the activation energy of films and their enhanced surface reactivity can be explained in terms of the dopant ionic radius effects on the Ce4+ → Ce3+ reduction as a result of lattice relaxation. Such findings open new perspectives in designing ceria-based materials with tailored properties by choosing suitable cation substitution.
From our users
Dalton Trans., 45, 134-143, (2015)
Surface induces different crystal structures in a room temperature switchable spin crossover compound
D. Gentili, F. Liscio, N. Demitri, B. Schäfer, F. Borgatti, P. Torelli, B. Gobaut, G. Panaccione, G. Rossi, A. Degli Esposti, M. Gazzano, S. Milita, I. Bergenti, G. Ruani, I. Šalitroš, M. Rubendi and M. Cavallini
We investigated the influence of surfaces in the formation of different crystal structures of a spin crossover compound, namely [Fe(L)2] (LH: (2-(pyrazol-1-yl)-6-(1H-tetrazol-5-yl)pyridine), which is a neutral compound thermally switchable around room temperature. We observed that the surface induces the formation of two different crystal structures, which exhibit opposite spin transitions, i.e. on heating them up to the transition temperature, one polymorph switches from high spin to low spin and the second polymorph switches irreversibly from low spin to high spin. We attributed this inversion to the presence of water molecules H-bonded to the complex tetrazolyl moieties in the crystals. Thin deposits were investigated by means of polarized optical microscopy, atomic force microscopy, X-ray diffraction, X-ray absorption spectroscopy and micro Raman spectroscopy; moreover the analysis of the Raman spectra and the interpretation of spin inversion were supported by DFT calculations.
Login
You're being redirected, please wait few moments...