The doping of metal oxides is an interesting route to increase catalyst activity and lower activation temperatures in H2 dissociation to replace Pt in catalysts for electrochemical devices. In this process, the roles of both the matrix and dopant cations are fundamental to understanding and designing more efficient catalysts. In this work, we have investigated the reduction process in pure and doped CeO2 films. We followed the oxidation states of Ce and dopants (Cu and Fe) during H2 exposure at ambient pressure by combining X-ray absorption spectroscopy and gas chromatography on 5 nm films in the temperature range of 300–620 K. We have observed that Cu doping (at concentrations of 5 and 14 at. %) promotes the ceria reduction, while the addition of Fe seems to have a limited impact on the oxide chemical reactivity only at low temperatures. Moreover, thanks to the chemical sensitivity of operando X-ray absorption spectroscopy, we were able to follow simultaneously the evolution of Ce and Cu oxidation states during the reaction, which has permitted to identify two distinct reduction processes taking place above and below 500 K. These measurements show that at low temperatures, the H2 dissociation takes place at the Cu1+ sites, thus explaining the higher reactivity of the Cu-doped samples. The described mechanism can help in the design of Pt-free catalysts with enhanced performances.
In the search of low cost and more efficient electronic devices, here the properties of SrVO3 transparent conductor oxide (TCO) thin film are investigated, both visible-range optically transparent and highly conductive, it stands as a promising candidate to substitute the standard indium-tin-oxide (ITO) in applications. Its surface stability under water (both liquid and vapor) and other gaseous atmospheres is especially addressed. Through the use of spectroscopy characterizations, X-ray photoemission and operando X-ray absorption measurements, the formation of a thin Sr-rich V5+ layer located at the surface of the polycrystalline SrVO3 film with aging is observed, and for the first time how it can be removed from the surface by solvating in water atmosphere. The surface recovery is associated to an etching process, here spectroscopically characterized in operando conditions, allowing to follow the stoichiometric modification under reaction. Once exposed in oxygen atmosphere, the Sr-rich V5+ layer forms again. The findings improve the understanding of aging effects in perovskite oxides, allowing for the development of functionalized films in which it is possible to control or to avoid an insulating surface layer. This constitutes an important step towards the large-scale use of V-based TCOs, with possible implementations in oxide-based electronics.
We report on the growth and characterization of epitaxial YBa2Cu3O7−δ (YBCO) complex oxide thin films and related heterostructures exclusively by Pulsed Laser Deposition (PLD) and using first harmonic Nd:Y3Al5O12 (Nd:YAG) pulsed laser source (λ = 1064 nm). High-quality epitaxial YBCO thin film heterostructures display superconducting properties with transition temperature ∼ 80 K. Compared with the excimer lasers, when using Nd:YAG lasers, the optimal growth conditions are achieved at a large target-to-substrate distance d. These results clearly demonstrate the potential use of the first harmonic Nd:YAG laser source as an alternative to the excimer lasers for the PLD thin film community. Its compactness as well as the absence of any safety issues related to poisonous gas represent a major breakthrough in the deposition of complex multi-element compounds in form of thin films.
Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources—both lasers can be independently used within the deposition chambers—a large number of different materials—ranging from oxides to metals, to selenides, and others—can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders’ manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures.
We present the results of a photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES) study on high quality, epitaxial SrNbO3 thin films prepared in situ by pulsed laser deposition (PLD). We show that the Fermi surface is composed of three bands mainly due to t(2g) orbitals of Nb 4d, in analogy with the 3d-based perovskite systems. The bulk band dispersion for the conduction and valence states obtained by density functional theory (DFT) is generally consistent with the ARPES data. The small discrepancy in the bandwidth close to the Fermi level seems to result from the interplay of correlation effects and the presence of vacancies. The ARPES results are complemented by soft x-ray photoemission spectroscopy measurements in order to provide indications on the chemical states and the stoichiometry of the material.
By performing density functional theory and Green's functions calculations, complemented by x-ray photoemission spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such a system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization, and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are hardly altered by the ferromagnetic overlayer. This could have a deep impact on spin-dependent phenomena observed at this interface, such as spin-to-charge interconversion, which are likely to involve bulk rather than surface Rashba states.
The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combining high-resolution angle-resolved photoemission spectroscopy and first principles calculations (with and without spin-orbit coupling), the electronic structure of the rutile binary iridate,
IrO2, is investigated. The detailed study of electronic bands measured on a high-quality single crystalline sample and use of a wide range of photon energy provide a huge improvement over the previous studies. The excellent agreement between theory and experimental results shows that the single-particle DFT description of IrO2 band structure is adequate, without the need of invoking any treatment of correlation effects. Although many observed features point to a 3D nature of the electronic structure, clear surface effects are revealed. The discussion of the orbital character of the relevant bands crossing the Fermi level sheds light on spin-orbit-coupling-driven phenomena in this material, unveiling a spin-orbit-induced avoided crossing, a property likely to play a key role in its large spin Hall effect.
We present a new experimental setup for performing X-ray Absorption Spectroscopy (XAS) in the soft X-ray range at ambient pressure. The ambient pressure XAS setup is fully compatible with the ultra high vacuum environment of a synchrotron radiation spectroscopy beamline end station by means of ultrathin Si3N4 membranes acting as windows for the X-ray beam and seal of the atmospheric sample environment. The XAS detection is performed in total electron yield (TEY) mode by probing the drain current from the sample with a picoammeter. The high signal/noise ratio achievable in the TEY mode, combined with a continuous scanning of the X-ray energies, makes it possible recording XAS spectra in a few seconds. The first results show the performance of this setup to record fast XAS spectra from sample surfaces exposed at atmospheric pressure, even in the case of highly insulating samples. The use of a permanent magnet inside the reaction cell enables the measurement of X-ray magnetic circular dichroism at ambient pressure.
We investigate the solvatochromic effect of a Fe-based spin-crossover (SCO) compound via ambient pressure soft X-ray absorption spectroscopy (AP-XAS) and atomic force microscopy (AFM). AP-XAS provides the direct evidence of the spin configuration for the Fe(II) 3d states of the SCO material upon in situ exposure to specific gas or vapor mixtures; concurrent changes in nanoscale topography and mechanical characteristics are revealed via AFM imaging and AFM-based force spectroscopy, respectively. We find that exposing the SCO material to gaseous helium promotes an effective decrease of the transition temperature of its surface layers, while the exposure to methanol vapor causes opposite surfacial and bulk solvatochromic effects. Surfacial solvatochromism is accompanied by a dramatic reduction of the surface layers stiffness. We propose a rationalization of the observed effects based on interfacial dehydration and solvation phenomena.
The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.
The conduction and optoelectronic properties of transparent conductive oxides can be largely modified by intentional inclusion of dopants over a very large range of concentrations. However, the simultaneous presence of structural defects results in an unpredictable complexity that prevents a clear identification of chemical and structural properties of the final samples. By exploiting the unique chemical sensitivity of Hard X-ray Photoelectron Spectra and Near Edge X-ray Absorption Fine Structure in combination with Density Functional Theory, we determine the contribution to the spectroscopic response of defects in Al-doped ZnO films. Satellite peaks in O1s and modifications at the O K-edge allow the determination of the presence of H embedded in ZnO and the very low concentration of Zn vacancies and O interstitials in undoped ZnO. Contributions coming from substitutional and (above the solubility limit) interstitial Al atoms have been clearly identified and have been related to changes in the oxide stoichiometry and increased oxygen coordination, together with small lattice distortions. In this way defects and doping in oxide films can be controlled, in order to tune their properties and improve their performances.
In this work, we studied the influence of the buffer layer composition on the IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers. By means of magnetometry, x-ray absorption and x-ray photoelectron spectroscopy, we investigated the magnetic and chemical properties of the stacks. We demonstrated a higher diffusion of Mn through the Co layer in the case of a Cu buffer layer. This is consistent with the observation of larger IrMn thickness threshold for the onset of exchange bias.
In this work we investigated in detail the effects of nitric acid on the surface chemistry of two carbons, activated by steam and by phosphoric acid, meant to identify the nature and the concentration of the oxidized surface species. To this aim, the oxidized carbons were characterized by means of a large number of complementary techniques, including micro-Raman spectroscopy, N2 physisorption, Boehm titration method, 13C solid state nuclear magnetic resonance, X-ray photoelectron spectroscopy, diffuse reflectance infrared and inelastic neutron scattering spectroscopy. Carboxylic and carboxylate groups are mainly formed, the latter stabilized by the extended conjugation of the π electrons and being more abundant on small and irregular graphitic platelets. We demonstrated that the presence of oxygen-containing groups acts against the palladium dispersion and causes the appearance of an appreciable induction time in hydrogenation reactions. The carbon with more oxygenated surface species (and in particular more carboxylate groups) must be chosen in the hydrogenation of polar substrates, while it is detrimental to the hydrogenation of nonpolar substrates.
The recent discovery of hidden spin polarization emerging in bulk electronic states of specific nonmagnetic crystals is a fascinating phenomenon, though hardly explored yet. Here, we study from a theoretical perspective nonmagnetic
BaNiS2, recently suggested to exhibit a giant Rashba-like spin-orbit splitting of the bulk bands, despite the absence of heavy elements. We employ density functional theory and Green's functions calculations to reveal the exact spin textures of both bulk and surface. We predict unambiguous signatures of spin-polarized electronic states at the surface, which reflect the bulk Rashba splitting and which could be experimentally measured with sufficient resolution: this would constitute a clear report of a bulk-Rashba-induced spin splitting at the surface of centrosymmetric crystals.
The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.