Quantitative Ultrafast Electron-Temperature Dynamics in Photo-Excited Au Nanoparticles
M. Sygletou, S. Benedetti, M. Ferrera, G.M. Pierantozzi, R. Cucini, G. Della Valle, P. Carrara, A. De Vita, A. di Bona, P. Torelli, D. Catone, Gi. Panaccione, M. Canepa, F. Bisio
The femtosecond evolution of the electronic temperature of laser-excited gold nanoparticles is measured, by means of ultrafast time-resolved photoemission spectroscopy induced by extreme-ultraviolet radiation pulses. The temperature of the electron gas is deduced by recording and fitting high-resolution photo emission spectra around the Fermi edge of gold nanoparticles providing a direct, unambiguous picture of the ultrafast electron-gas dynamics. These results will be instrumental to the refinement of existing models of femtosecond processes in laterally-confined and bulk condensed-matter systems, and for understanding more deeply the role of hot electrons in technological applications.
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J. Phys. Chem. C, 124, 17783–17794, (2020)
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs
F. Berto, N. Haghighian, K. Ferfolja, S. Gardonio, M. Fanetti, F. Martelli, V. Mussi, V.G. Dubrovskii, I.V. Shtrom, A. Franciosi, and S. Rubini
Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 degrees C the Audecorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply from the GaAs substrate by thick, in-plane worm-like Ga2Se3 structures, which grow concomitantly with the nanowires, followed by backward diffusion of Ga atoms from the nanowires down to the substrate surface.
From our users
Nano Lett., 18, 5, 2751–2758, (2018)
Ferroelectric Control of the Spin Texture in GeTe
C. Rinaldi , S. Varotto, M. Asa, J. Sławińska, J. Fujii, G. Vinai, S. Cecchi, D. Di Sante, R. Calarco, I. Vobornik, G. Panaccione, S. Picozzi, R. Bertacco
The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.
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