VO2 is one of the most studied vanadium oxides because it undergoes a reversible metal-insulator transition (MIT) upon heating with a critical temperature of around 340 K. One of the most overlooked aspects of VO2 is the band’s anisotropy in the metallic phase when the Fermi level is crossed by two bands: π* and d||. They are oriented perpendicularly in one respect to the other, hence generating anisotropy. One of the parameters tuning MIT properties is the unbalance of the electron population of π* and d|| bands that arise from their different energy position with respect to the Fermi level. In systems with reduced dimensionality, the electron population disproportion is different with respect to the bulk leading to a different anisotropy. Investigating such a system with a band-selective spectroscopic tool is mandatory. In this manuscript, we show the results of the investigation of a single crystalline 8 nm VO2/TiO2(101) film. We report on the effectiveness of linearly polarized resonant photoemission (ResPES) as a band-selective technique probing the intrinsic anisotropy of VO2.
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Nanomaterials, 12(7), 1092, (2022)
Comparing Thickness and Doping-Induced Effects on the Normal States of Infinite-Layer Electron-Doped Cuprates: Is There Anything to Learn?
C. Sacco, A. Galdi, F. Romeo, N. Coppola, P. Orgiani, H.I. Wei, K.M. Shen, D.G. Schlom, L. Maritato
We grew Sr1-xLaxCuO2 thin films and SrCuO2/Sr0.9La0.1CuO2/SrCuO2 trilayers by reflection high-energy diffraction-calibrated layer-by-layer molecular beam epitaxy, to study their electrical transport properties as a function of the doping and thickness of the central Sr0.9La0.1CuO2 layer. For the trilayer samples, as already observed in underdoped SLCO films, the electrical resistivity versus temperature curves as a function of the central layer thickness show, for thicknesses thinner than 20 unit cells, sudden upturns in the low temperature range with the possibility for identifying, in the normal state, the T* and a T** temperatures, respectively, separating high-temperature linear behavior and low-temperature quadratic dependence. By plotting the T* and T** values as a function of TConset for both the thin films and the trilayers, the data fall on the same curves. This result suggests that, for the investigated trilayers, the superconducting critical temperature is the important parameter able to describe the normal state properties and that, in the limit of very thin central layers, such properties are mainly influenced by the modification of the energy band structure and not by interface-related disorder.
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Phys. Rev. Materials, 5, 104403, (2021)
Identification of hidden orbital contributions in the La0.65Sr0.35MnO3 valence band
F. Offi, K. Yamauchi, S. Picozzi, V. Lollobrigida, A. Verna, C. Schlueter, T.-L. Lee, A. Regoutz, D. J. Payne, A. Petrov, G. Vinai, G. M. Pierantozzi, T. Pincelli, G. Panaccione, and F. Borgatti
Hybridization of electronic states and orbital symmetry in transition metal oxides are generally considered key ingredients in the description of both their electronic and magnetic properties. In the prototypical case of La0.65Sr0.35MnO3 (LSMO), a landmark system for spintronics applications, a description based solely on Mn 3d and O 2p electronic states is reductive. We thus analyzed elemental and orbital distributions in the LSMO valence band through a comparison between density functional theory calculations and experimental photoelectron spectra in a photon energy range from soft to hard x rays. We reveal a number of hidden contributions, arising specifically from La 5p, Mn 4s, and O 2s orbitals, considered negligible in previous analyses; our results demonstrate that all these contributions are significant for a correct description of the valence band of LSMO and of transition metal oxides in general.
NFFA Thesis
University of Milan Bachelor's Degree Thesis, (2020)
E-field effect on the Fe/PMN-PT heterostructure morphology and magnetism
This thesis is focused the structural and spectroscopic characterization of multiferroic heterostructures composed of a thin film of iron, which is ferromagnetic, deposited on a bulk PMN-PT ([Pb(Mg1/3Nb2/3)O3]1−x–[PbTiO3]x) substrate, which is ferroelectric. The epitaxially grown interface between two mate-rials displays the magnetoelectric coupling. By applying an electric field across the thickness of the substrate (i.e. along the growth direction) it is possible to polarize and deform the ferroelectric crystal structure, thus manipulating the magnetic properties of the over-layer. In this work, we analyse how the two opposite polarized states of the PMN-PT affect the magnetic anisotropy of the iron overlayer and the role of morphology in this modifications. In particular the morphology represents an important factor in the magnetoelectric mechanisms that has been little investigated before.
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J. Phys. Chem. C, 124, 17783–17794, (2020)
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs
F. Berto, N. Haghighian, K. Ferfolja, S. Gardonio, M. Fanetti, F. Martelli, V. Mussi, V.G. Dubrovskii, I.V. Shtrom, A. Franciosi, and S. Rubini
Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 degrees C the Audecorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply from the GaAs substrate by thick, in-plane worm-like Ga2Se3 structures, which grow concomitantly with the nanowires, followed by backward diffusion of Ga atoms from the nanowires down to the substrate surface.
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J. Vac. Sci. Technol. B, 37, 061209, (2019)
Transparent conductive oxide-based architectures for the electrical modulation of the optical response: A spectroscopic ellipsometry study
M. Sygletou, F. Bisio, S. Benedetti, P. Torelli, A. di Bona, A. Petrov, and M. Canepa
Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.
In this work, I am going to present the main results of the scientific activity in which I was involved during my summer internship at CNR-IOM in Trieste (Italy) during the period, May 16, 2019 to August 10, 2019.
This report focuses on the magneto-optic Kerr effect (MOKE) investigations done on two set of samples. The first set of samples regards the optimization of the deposition parameters of CoFeB, in order to obtain a sample with low coercive field and isotropic behavior. The aim is to obtain a soft isotropic ferromagnetic layer, for further implementation into ferroelectric/ferromagnetic heterostructures. The second set regards a run of experiments with the aim of setting an exchange bias coupling by partially oxidizing the ferromagnetic layer through the substrate deoxidation. Here Fe (10 nm) ferromagnetic layer is deposited on substrate Lithium Niobate (LNZ).
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Phys. Status Solidi (A), 215, 1800015, (2018)
Bonding Character and Magnetism at the Interface Between Fe and MoS2 Nanosheets
R. Mantovan, Y. Matveyev, G. Vinai, C. Martella, P. Torelli, A. Molle, S. Zarubin, Y. Lebedinskii, A. Zenkevich
In order to enable the use of the prototypical 2D‐layered MoS2 for spintronics, its integration with ferromagnetic layers is mandatory. By employing interface‐sensitive 57Fe conversion electron Mössbauer spectroscopy (CEMS), hard X‐ray photoelectron spectroscopy (HAXPES), and transmission electron microscopy (TEM), the chemical, structural, and magnetic properties of the Fe/2D‐MoS2 interface are investigated. CEMS shows that out of the first 1 nm of Fe in direct contact with 2D‐MoS2, about half of the Fe atoms keeps the un‐perturbed Fe local environment, partly in regions where the original 2D‐layered structure of MoS2 is preserved as shown by TEM. The remaining reacting Fe atoms exclusively bond with Mo, with the majority of them being characterized by a ferromagnetic environment and the rest coordinating in a paramagnetic Fe‐Mo configuration. The preferential Fe bonding with Mo is corroborated by HAXPES analysis. The results provide detailed insight into the link between the bonding configuration and the interfacial magnetism at the Fe/2D‐MoS2 heterojunction.
NFFA Thesis
Roma Tre University PhD Thesis, (2016)
Strongly correlated electron materials: A core level photoelectron spectroscopy investigation
One of the most fascinating challenges in modern solid state physics, both from a theoretical and an experimental point of view, is the comprehension of electron correlation and how it can aect the macroscopic properties of materials. Eects of electron correlation are extremely important in materials with open d and f electron shells, where electrons are conned in narrow orbitals and the interaction between the electrons internal degrees of freedom are enhanced. In fact these systems are known to display some of the most intriguing phenomena in condensed matter physics, such as:
huge changes in the resistivity passing the metal-insulator transition in vanadium oxide or upon application of a magnetic eld in manganites;
considerable volume changes across phase transitions in actinides and lanthanides;
high superconductivity transition temperatures (above liquid nitrogen temperatures) in copper-oxygen planes based materials.
The possibility to exploit these properties to realise devices has driven many theoretical and experimental eorts directed to understand how to describe these phenomena and how to control them by manipulating external parameters such as temperature, doping, etc.
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