The main goal of this dissertation is the study of the effects induced by quantum confinement in transition-metal oxides quantum wells (QWs). The field of possible applications of oxide-based heterostructures (oxide-based nanoelectronics, spintronics, quantum computation, excitonic devices, energy conversion in solar cells, etc.) is very ample and growing, thanks to the many fascinating and exotic properties of transition-metal oxides and their versatility as well. p-type SrMnO3/La0.7Sr0.3MnO3/SrMnO3QWs and n-type SrCuO2/Sr0.9La0.1CuO2/SrCuO2QWs have been studied. The first part of my work has been devoted to the investigation of quantum confinement achievement using a Mott insulator with a small band gap. The observed results suggest that this type of material can be successfully used in QWs.As a final result of my work, the achievement of dimensional effects induced by the layering on the normal state of both investigated systems (n and p-doped) has been assessed. In addition, the layering has been shown to influence the superconducting state of the investigated n-doped QWs and on the metal-to-insulator transition of the p-doped QWs. The investigation of the behavior of each layer constituent the QW (both nand p-doped) is relevant in view of future growth of proximate p-ndoped systems. Part of my work, therefore, has been devoted to the study of the properties of (Sr,La)CuO2thin films. The study of electrical transport properties of SLCO thin films as a function of the doping has allowed to relate the presence of the low temperature upturn in the (Sr,La)CuO2resistivity versus temperature curves the quantum interference effects produced by weak localization effects. Furthermore, the presence of low temperature Fermi liquid behaviors in SLCO thin films has also been observed.The last part of my work has dealt with the effects of the in-situannealing step on the final superconductivity properties of the (Sr,La)CuO2films, helping to optimize the growth step, crucial for the quality of this thin film and, consequently, of the n-doped QWs based on this compound. The effect of annealing, i.e. of the O content, has been studied, by using X-ray Absorption Spectroscopy (XAS) measurements performed at the Elettra Synchrotron in Trieste, Italy, and has allowed to reveal clear signature of apical Oxygen removal.