VO2 is one of the most studied vanadium oxides because it undergoes a reversible metal-insulator transition (MIT) upon heating with a critical temperature of around 340 K. One of the most overlooked aspects of VO2 is the band’s anisotropy in the metallic phase when the Fermi level is crossed by two bands: π* and d||. They are oriented perpendicularly in one respect to the other, hence generating anisotropy. One of the parameters tuning MIT properties is the unbalance of the electron population of π* and d|| bands that arise from their different energy position with respect to the Fermi level. In systems with reduced dimensionality, the electron population disproportion is different with respect to the bulk leading to a different anisotropy. Investigating such a system with a band-selective spectroscopic tool is mandatory. In this manuscript, we show the results of the investigation of a single crystalline 8 nm VO2/TiO2(101) film. We report on the effectiveness of linearly polarized resonant photoemission (ResPES) as a band-selective technique probing the intrinsic anisotropy of VO2.
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J. Mater. Chem. C, (2022)
Lithium intercalation mechanisms and critical role of multi-doping in LiFexMn2-x-yTiyO4 as high-capacity cathode material for Lithium-ion batteries
D. Callegari, M. Coduri, M. Fracchia, P. Ghigna, L. Braglia, U. Anselmi-Tamburini and E. Quartarone
The ever-growing demand for Li-ion batteries requires high-capacity electrode materials that should also be environmentally benign, Co-free, secure and durable, to achieve an optimal compromise between sustainability and functional performances. Spinel LiMn2O4 (LMO) is a state-of-the-art material, which, in principle, could satisfy such requirements. However, an undesired cubic-tetragonal phase transition favors Jahn-Teller (J-T) spinel distortion, leading to severe capacity reduction upon cycling below 3 V. Here, we propose a novel dual-doping strategy for LMO, based on the partial substitution of Mn(III) with Fe(III) and Ti(IV) to design new active materials for high-capacity cathodes, namely LiFexMn2-x-yTiyO4 (LFMT), with Li/Mn ratio ranging between 1 and 1.7. The substitution of Mn with Fe and Ti suppresses the J-T distortion, which is often still evident in the case of Ti-doped LMO. This allows cycling in a wider voltage range (4.8-1.5 V), thus resulting in higher capacity and significantly improved stability. The lithiation mechanisms were investigated by combining ex-situ X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS analyses). It demonstrated that the only redox-active metal is Mn, while Fe and Ti are electrochemically inactive. The extensive electrochemical lithiation/delithiation of the LFMT compositions brought to unprecedented results, which give evidence of stabilizing cation disorder through the formation of Mn-rich and Mn-poor domains, which leades to two spinel phases with different Mn:Ti ratios. These insights into the lithiation mechanism pave the way for a better understanding of the doping chemistry and electrochemistry of Mn-based spinels as cathode materials for Li-ion batteries.
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Nanomaterials, 12(7), 1092, (2022)
Comparing Thickness and Doping-Induced Effects on the Normal States of Infinite-Layer Electron-Doped Cuprates: Is There Anything to Learn?
C. Sacco, A. Galdi, F. Romeo, N. Coppola, P. Orgiani, H.I. Wei, K.M. Shen, D.G. Schlom, L. Maritato
We grew Sr1-xLaxCuO2 thin films and SrCuO2/Sr0.9La0.1CuO2/SrCuO2 trilayers by reflection high-energy diffraction-calibrated layer-by-layer molecular beam epitaxy, to study their electrical transport properties as a function of the doping and thickness of the central Sr0.9La0.1CuO2 layer. For the trilayer samples, as already observed in underdoped SLCO films, the electrical resistivity versus temperature curves as a function of the central layer thickness show, for thicknesses thinner than 20 unit cells, sudden upturns in the low temperature range with the possibility for identifying, in the normal state, the T* and a T** temperatures, respectively, separating high-temperature linear behavior and low-temperature quadratic dependence. By plotting the T* and T** values as a function of TConset for both the thin films and the trilayers, the data fall on the same curves. This result suggests that, for the investigated trilayers, the superconducting critical temperature is the important parameter able to describe the normal state properties and that, in the limit of very thin central layers, such properties are mainly influenced by the modification of the energy band structure and not by interface-related disorder.
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Phys. Rev. Materials, 5, 104403, (2021)
Identification of hidden orbital contributions in the La0.65Sr0.35MnO3 valence band
F. Offi, K. Yamauchi, S. Picozzi, V. Lollobrigida, A. Verna, C. Schlueter, T.-L. Lee, A. Regoutz, D. J. Payne, A. Petrov, G. Vinai, G. M. Pierantozzi, T. Pincelli, G. Panaccione, and F. Borgatti
Hybridization of electronic states and orbital symmetry in transition metal oxides are generally considered key ingredients in the description of both their electronic and magnetic properties. In the prototypical case of La0.65Sr0.35MnO3 (LSMO), a landmark system for spintronics applications, a description based solely on Mn 3d and O 2p electronic states is reductive. We thus analyzed elemental and orbital distributions in the LSMO valence band through a comparison between density functional theory calculations and experimental photoelectron spectra in a photon energy range from soft to hard x rays. We reveal a number of hidden contributions, arising specifically from La 5p, Mn 4s, and O 2s orbitals, considered negligible in previous analyses; our results demonstrate that all these contributions are significant for a correct description of the valence band of LSMO and of transition metal oxides in general.
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ACS Catal., 11, 9949–9961, (2021)
Electronic Properties of Ti Sites in Ziegler–Natta Catalysts
A. Piovano, M. Signorile, L. Braglia, P. Torelli, A. Martini, T. Wada, G. Takasao, T. Taniike, and E. Groppo
Although Ziegler–Natta (ZN) catalysts play a major role in the polyolefin market, a true understanding of their properties at the molecular level is still missing. In particular, there is a lack of knowledge on the electronic properties of Ti sites. Theoretical calculations predict that the electron density of the Ti sites in the precatalysts correlates with the activation energy for olefin insertion in the Ti-alkyl bond generated at these sites after activation by Al-alkyls. It is also well known that the effective charge on the Ti sites in the activated catalysts affects the olefin π-complexation. In this contribution, we exploit two electronic spectroscopies, UV–vis and Ti L2,3-edge near-edge X-ray absorption fine structure (NEXAFS), complemented with theoretical simulation to investigate three ZN precatalysts of increasing complexity (up to an industrial system) and the corresponding catalysts activated by triethylaluminum (TEAl). We provide compelling evidence for the presence of monomeric 6-fold-coordinated Ti4+ species in all of the precatalysts, which however differ in the effective charge on the Ti sites. We also unambiguously demonstrate that these sites are reduced by TEAl to two types of monomeric 5-coordinated Ti3+, either alkylated or not, and that the former are involved in ethylene polymerization. In addition, small TiCl3 clusters are formed in the industrial catalyst, likely due to the occurrence of severe reducing conditions within the catalyst pores. These data prove the potential of these two techniques, coupled with simulation, in providing an accurate description of the electronic properties of heterogeneous ZN catalysts.
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J. Phys. Chem. C, 124, 17783–17794, (2020)
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs
F. Berto, N. Haghighian, K. Ferfolja, S. Gardonio, M. Fanetti, F. Martelli, V. Mussi, V.G. Dubrovskii, I.V. Shtrom, A. Franciosi, and S. Rubini
Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 degrees C the Audecorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply from the GaAs substrate by thick, in-plane worm-like Ga2Se3 structures, which grow concomitantly with the nanowires, followed by backward diffusion of Ga atoms from the nanowires down to the substrate surface.
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J. Vac. Sci. Technol. B, 37, 061209, (2019)
Transparent conductive oxide-based architectures for the electrical modulation of the optical response: A spectroscopic ellipsometry study
M. Sygletou, F. Bisio, S. Benedetti, P. Torelli, A. di Bona, A. Petrov, and M. Canepa
Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.
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Phys. Status Solidi (A), 215, 1800015, (2018)
Bonding Character and Magnetism at the Interface Between Fe and MoS2 Nanosheets
R. Mantovan, Y. Matveyev, G. Vinai, C. Martella, P. Torelli, A. Molle, S. Zarubin, Y. Lebedinskii, A. Zenkevich
In order to enable the use of the prototypical 2D‐layered MoS2 for spintronics, its integration with ferromagnetic layers is mandatory. By employing interface‐sensitive 57Fe conversion electron Mössbauer spectroscopy (CEMS), hard X‐ray photoelectron spectroscopy (HAXPES), and transmission electron microscopy (TEM), the chemical, structural, and magnetic properties of the Fe/2D‐MoS2 interface are investigated. CEMS shows that out of the first 1 nm of Fe in direct contact with 2D‐MoS2, about half of the Fe atoms keeps the un‐perturbed Fe local environment, partly in regions where the original 2D‐layered structure of MoS2 is preserved as shown by TEM. The remaining reacting Fe atoms exclusively bond with Mo, with the majority of them being characterized by a ferromagnetic environment and the rest coordinating in a paramagnetic Fe‐Mo configuration. The preferential Fe bonding with Mo is corroborated by HAXPES analysis. The results provide detailed insight into the link between the bonding configuration and the interfacial magnetism at the Fe/2D‐MoS2 heterojunction.
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