Formation and Etching of the Insulating Sr-Rich V5+ Phase at the Metallic SrVO3 Surface Revealed by Operando XAS Spectroscopy Characterizations
V. Polewczyk, M. Mezhoud, M. Rath, O. El-Khaloufi, F. Bassato, A. Fouchet, W. Prellier, M. Frégnaux, D. Aureau, L. Braglia, G. Vinai, P. Torelli, U. Lüders
In the search of low cost and more efficient electronic devices, here the properties of SrVO3 transparent conductor oxide (TCO) thin film are investigated, both visible-range optically transparent and highly conductive, it stands as a promising candidate to substitute the standard indium-tin-oxide (ITO) in applications. Its surface stability under water (both liquid and vapor) and other gaseous atmospheres is especially addressed. Through the use of spectroscopy characterizations, X-ray photoemission and operando X-ray absorption measurements, the formation of a thin Sr-rich V5+ layer located at the surface of the polycrystalline SrVO3 film with aging is observed, and for the first time how it can be removed from the surface by solvating in water atmosphere. The surface recovery is associated to an etching process, here spectroscopically characterized in operando conditions, allowing to follow the stoichiometric modification under reaction. Once exposed in oxygen atmosphere, the Sr-rich V5+ layer forms again. The findings improve the understanding of aging effects in perovskite oxides, allowing for the development of functionalized films in which it is possible to control or to avoid an insulating surface layer. This constitutes an important step towards the large-scale use of V-based TCOs, with possible implementations in oxide-based electronics.
Our Research
Rev. Sci. Instrum., 89, 054101, (2018)
A reaction cell for ambient pressure soft x-ray absorption spectroscopy
C. Castán-Guerrero, D. Krizmancic, V. Bonanni, R. Edla, A. Deluisa, F. Salvador, G. Rossi, G. Panaccione, and P. Torelli
We present a new experimental setup for performing X-ray Absorption Spectroscopy (XAS) in the soft X-ray range at ambient pressure. The ambient pressure XAS setup is fully compatible with the ultra high vacuum environment of a synchrotron radiation spectroscopy beamline end station by means of ultrathin Si3N4 membranes acting as windows for the X-ray beam and seal of the atmospheric sample environment. The XAS detection is performed in total electron yield (TEY) mode by probing the drain current from the sample with a picoammeter. The high signal/noise ratio achievable in the TEY mode, combined with a continuous scanning of the X-ray energies, makes it possible recording XAS spectra in a few seconds. The first results show the performance of this setup to record fast XAS spectra from sample surfaces exposed at atmospheric pressure, even in the case of highly insulating samples. The use of a permanent magnet inside the reaction cell enables the measurement of X-ray magnetic circular dichroism at ambient pressure.
Our Research
J. Phys.: Conf. Ser., 903, 012061, (2017)
Influence of Mn diffusion on IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers
G. Vinai, L. Frangou, C. Castan-Guerrero, V. Bonanni, B. Gobaut, S. Auffret, I.L. Prejbeanu, B. Dieny, V. Baltz and P. Torelli
In this work, we studied the influence of the buffer layer composition on the IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers. By means of magnetometry, x-ray absorption and x-ray photoelectron spectroscopy, we investigated the magnetic and chemical properties of the stacks. We demonstrated a higher diffusion of Mn through the Co layer in the case of a Cu buffer layer. This is consistent with the observation of larger IrMn thickness threshold for the onset of exchange bias.
Our Research
AIP Advances, 5, 127128, (2015)
Magnetoresistance of galfenol-based magnetic tunnel junction
B. Gobaut, G. Vinai, C. Castan-Guerrero, D. Krizmancic, H. Rafaqat, S. Roddaro, G. Rossi, G. Panaccione, M. Eddrief, M. Marangolo, and P. Torelli
The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.
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