In the last decade, reducing the dimensionality of materials to few atomic layers thickness has allowed exploring new physical properties and functionalities otherwise absent out of the two dimensional limit. In this regime, interfaces and interlayers play a crucial role. Here, we investigate their influence on the electronic properties and structural quality of ultrathin Cr2O3 on Pt(111), in presence of a multidomain graphene intralayer. Specifically, by combining Low-Energy Electron Diffraction, X-ray Photoelectron Spectroscopy and X-ray Absorption Spectroscopy, we confirm the growth of high-quality ultrathin Cr2O3 on bare Pt, with sharp surface reconstructions, proper stoichiometry and good electronic quality. Once a multidomain graphene intralayer is included at the metal/oxide interface, the Cr2O3 maintained its correct stoichiometry and a comparable electronic quality, even at the very first monolayers, despite the partially lost of the morphological long-range order. These results show how ultrathin Cr2O3 films are slightly affected by the interfacial epitaxial quality from the electronic point of view, making them potential candidates for graphene-integrated heterostructures.

The possibility of modifying the ferromagnetic response of a multiferroic heterostructure via fully optical means exploiting the photovoltaic/photostrictive properties of the ferroelectric component is an effective method for tuning the interfacial properties. In this study, the effects of 405 nm visible-light illumination on the ferroelectric and ferromagnetic responses of (001) Pb(Mg1/3Nb2/3)O3-0.4PbTiO3 (PMN-PT)/Ni heterostructures are presented. By combining electrical, structural, magnetic, and spectroscopic measurements, how light illumination above the ferroelectric bandgap energy induces a photovoltaic current and the photostrictive effect reduces the coercive field of the interfacial magnetostrictive Ni layer are shown. Firstly, a light-induced variation in the Ni orbital moment as a result of sum-rule analysis of x-ray magnetic circular dichroic measurements is reported. The reduction of orbital moment reveals a photogenerated strain field. The observed effect is strongly reduced when polarizing out-of-plane the PMN-PT substrate, showing a highly anisotropic photostrictive contribution from the in-plane ferroelectric domains. These results shed light on the delicate energy balance that leads to sizeable light-induced effects in multiferroic heterostructures, while confirming the need of spectroscopy for identifying the physical origin of interface behavior.

We present a new experimental setup for performing X-ray Absorption Spectroscopy (XAS) in the soft X-ray range at ambient pressure. The ambient pressure XAS setup is fully compatible with the ultra high vacuum environment of a synchrotron radiation spectroscopy beamline end station by means of ultrathin Si3N4 membranes acting as windows for the X-ray beam and seal of the atmospheric sample environment. The XAS detection is performed in total electron yield (TEY) mode by probing the drain current from the sample with a picoammeter. The high signal/noise ratio achievable in the TEY mode, combined with a continuous scanning of the X-ray energies, makes it possible recording XAS spectra in a few seconds. The first results show the performance of this setup to record fast XAS spectra from sample surfaces exposed at atmospheric pressure, even in the case of highly insulating samples. The use of a permanent magnet inside the reaction cell enables the measurement of X-ray magnetic circular dichroism at ambient pressure.

In this work, we studied the influence of the buffer layer composition on the IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers. By means of magnetometry, x-ray absorption and x-ray photoelectron spectroscopy, we investigated the magnetic and chemical properties of the stacks. We demonstrated a higher diffusion of Mn through the Co layer in the case of a Cu buffer layer. This is consistent with the observation of larger IrMn thickness threshold for the onset of exchange bias.

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.