The fabrication and integration of high-quality structures of Yttrium Iron Garnet (YIG) is critical for magnonics. Films with excellent properties are obtained only on single crystal Gadolinium Gallium Garnet (GGG) substrates using high-temperature processes. The subsequent realization of magnonic structures via lithography and etching is not straightforward as it requires a tight control of the edge roughness, to avoid magnon scattering, and planarization in case of multilayer devices. In this work a different approach is described based on local laser annealing of amorphous YIG films, avoiding the need for subjecting the entire sample to high thermal budgets and for physical etching. Starting from amorphous and paramagnetic YIG films grown by pulsed laser deposition at room temperature on GGG, a 405 nm laser is used for patterning arbitrary shaped ferrimagnetic structures by local crystallization. In thick films (160 nm) the laser induced surface corrugation prevents the propagation of spin-wave modes in patterned conduits. For thinner films (80 nm) coherent propagation is observed in 1.2 µm wide conduits displaying an attenuation length of 5 µm that is compatible with a damping coefficient of ≈5 × 10−3. Possible routes to achieve damping coefficients compatible with state-of-the art epitaxial YIG films are discussed.

The combination of the ability to absorb most of the solar radiation and simultaneously suppress infrared re-radiation allows selective solar absorbers (SSAs) to maximize solar energy to heat conversion, which is critical to several advanced applications. The intrinsic spectral selective materials are rare in nature and only a few demonstrated complete solar absorption. Typically, intrinsic materials exhibit high performances when integrated into complex multilayered solar absorber systems due to their limited spectral selectivity and solar absorption. In this study, we propose CoSbx (2 < x < 3) as a new exceptionally efficient SSA. Here we demonstrate that the low bandgap nature of CoSbx endows broadband solar absorption (0.96) over the solar spectral range and simultaneous low emissivity (0.18) in the mid-infrared region, resulting in a remarkable intrinsic spectral solar selectivity of 5.3. Under 1 sun illumination, the heat concentrates on the surface of the CoSbx thin film, and an impressive temperature of 101.7 °C is reached, demonstrating the highest value among reported intrinsic SSAs. Furthermore, the CoSbx was tested for solar water evaporation achieving an evaporation rate of 1.4 kg m−2 h−1. This study could expand the use of narrow bandgap semiconductors as efficient intrinsic SSAs with high surface temperatures in solar applications.

${\mathrm{Mn}}_3{\mathrm{Si}}_2{\mathrm{Te}}_6$ is a rare example of a layered ferrimagnet. It has recently been shown to host a colossal angular magnetoresistance as the spin orientation is rotated from the in- to out-of-plane direction, proposed to be underpinned by a topological nodal-line degeneracy in its electronic structure. Nonetheless, the origins of its ferrimagnetic structure remain controversial, while its experimental electronic structure, and the role of correlations in shaping this, are little explored to date. Here, we combine x-ray and photoemission-based spectroscopies with first-principles calculations to probe the elemental-selective electronic structure and magnetic order in ${\mathrm{Mn}}_3{\mathrm{Si}}_2{\mathrm{Te}}_6$. Through these, we identify a marked Mn-Te hybridization, which weakens the electronic correlations and enhances the magnetic anisotropy. We demonstrate how this strengthens the magnetic frustration in ${\mathrm{Mn}}_3{\mathrm{Si}}_2{\mathrm{Te}}_6$, which is key to stabilizing its ferrimagnetic order, and find a crucial role of both exchange interactions extending beyond nearest-neighbors and antisymmetric exchange in dictating its ordering temperature. Together, our results demonstrate a powerful methodology of using experimental electronic structure probes to constrain the parameter space for first-principles calculations of magnetic materials, and through this approach, reveal a pivotal role played by covalency in stabilizing the ferrimagnetic order in ${\mathrm{Mn}}_3{\mathrm{Si}}_2{\mathrm{Te}}_6$.

Polarization dependent x-ray absorption spectroscopy was used to study the magnetic ground state and the orbital occupation in bulk-phase VI3 van der Waals crystals below and above the ferromagnetic and structural transitions. X-ray natural linear dichroism and x-ray magnetic circular dichroism spectra acquired at the V $L_{2,3}$ edges are compared against multiplet cluster calculations within the frame of the ligand field theory to quantify the intra-atomic electronic interactions at play and evaluate the effects of symmetry reduction occurring in a trigonally distorted VI6 unit. We observed a non zero linear dichroism proving the presence of an anisotropic charge density distribution around the V3+ ion due to the unbalanced hybridization between the vanadium and the ligand states. Such hybridization acts as an effective trigonal crystal field, slightly lifting the degeneracy of the $t_{2g}^2$ ground state. However, the energy splitting associated to the distortion underestimates the experimental band gap, suggesting that the insulating ground state is stabilized by Mott correlation effects rather than via a Jahn–Teller mechanism. Our results clarify the role of the distortion in VI3 and establish a benchmark for the study of the spectroscopic properties of other van der Waals halides, including emerging 2D materials with mono and few-layers thickness, whose fundamental properties might be altered by reduced dimensions and interface proximity.

VO2 is one of the most studied vanadium oxides because it undergoes a reversible metal-insulator transition (MIT) upon heating with a critical temperature of around 340 K. One of the most overlooked aspects of VO2 is the band’s anisotropy in the metallic phase when the Fermi level is crossed by two bands: π* and d||. They are oriented perpendicularly in one respect to the other, hence generating anisotropy. One of the parameters tuning MIT properties is the unbalance of the electron population of π* and d|| bands that arise from their different energy position with respect to the Fermi level. In systems with reduced dimensionality, the electron population disproportion is different with respect to the bulk leading to a different anisotropy. Investigating such a system with a band-selective spectroscopic tool is mandatory. In this manuscript, we show the results of the investigation of a single crystalline 8 nm VO2/TiO2(101) film. We report on the effectiveness of linearly polarized resonant photoemission (ResPES) as a band-selective technique probing the intrinsic anisotropy of VO2.

Single crystals of the hexagonal triangular lattice compound AgCrSe2 have been grown by chemical vapor transport. The crystals have been carefully characterized and studied by magnetic susceptibility, magnetization, specific heat, and thermal expansion. In addition, we used Cr-electron spin resonance and neutron diffraction to probe the Cr 3d3 magnetism microscopically. To obtain the electronic density of states, we employed x-ray absorption and resonant photoemission spectroscopy in combination with density functional theory calculations. Our studies evidence an anisotropic magnetic order below TN=32K. Susceptibility data in small fields of about 1 T reveal an antiferromagnetic (AFM) type of order for H⊥c, whereas for H∥c the data are reminiscent of a field-induced ferromagnetic (FM) structure. At low temperatures and for H⊥c, the field-dependent magnetization and AC susceptibility data evidence a metamagnetic transition at H+=5T, which is absent for H∥c. We assign this to a transition from a planar cycloidal spin structure at low fields to a planar fanlike arrangement above H+. A fully ferromagnetically polarized state is obtained above the saturation field of H⊥S=23.7T at 2 K with a magnetization of Ms=2.8μB/Cr. For H∥c, M(H) monotonically increases and saturates at the same Ms value at H∥S=25.1T at 4.2 K. Above TN, the magnetic susceptibility and specific heat indicate signatures of two dimensional (2D) frustration related to the presence of planar ferromagnetic and antiferromagnetic exchange interactions. We found a pronounced nearly isotropic maximum in both properties at about T∗=45K, which is a clear fingerprint of short range correlations and emergent spin fluctuations. Calculations based on a planar 2D Heisenberg model support our experimental findings and suggest a predominant FM exchange among nearest and AFM exchange among third-nearest neighbors. Only a minor contribution might be assigned to the antisymmetric Dzyaloshinskii-Moriya interaction possibly related to the noncentrosymmetric polar space group R3m. Due to these competing interactions, the magnetism in AgCrSe2, in contrast to the oxygen-based delafossites, can be tuned by relatively small, experimentally accessible magnetic fields, allowing us to establish the complete anisotropic magnetic H-T phase diagram in detail.

Hybridization of electronic states and orbital symmetry in transition metal oxides are generally considered key ingredients in the description of both their electronic and magnetic properties. In the prototypical case of La0.65Sr0.35MnO3 (LSMO), a landmark system for spintronics applications, a description based solely on Mn 3d and O 2p electronic states is reductive. We thus analyzed elemental and orbital distributions in the LSMO valence band through a comparison between density functional theory calculations and experimental photoelectron spectra in a photon energy range from soft to hard x rays. We reveal a number of hidden contributions, arising specifically from La 5p, Mn 4s, and O 2s orbitals, considered negligible in previous analyses; our results demonstrate that all these contributions are significant for a correct description of the valence band of LSMO and of transition metal oxides in general.

Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO2-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, a strong charge-mediated magnetoelectric coupling at the Ni/HfO2 interface has been predicted using density functional theory calculations. Here, we report on the experimental evidence of such magnetoelectric coupling at the Ni/Hf0.5Zr0.5O2(HZO) interface. Using a combination of operando XAS/XMCD and HAXPES/MCDAD techniques, we probe element-selectively the local magnetic properties at the Ni/HZO interface in functional Au/Co/Ni/HZO/W capacitors and demonstrate clear evidence of the ferroelectric polarization effect on the magnetic response of a nanometer-thick Ni marker layer. The observed magnetoelectric effect and the electronic band lineup of the Ni/HZO interface are interpreted based on the results of our theoretical modeling. It elucidates the critical role of an ultrathin NiO interlayer, which controls the sign of the magnetoelectric effect as well as provides a realistic band offset at the Ni/HZO interface, in agreement with the experiment. Our results hold promise for the use of ferroelectric HfO2-based composite multiferroics for the design of multifunctional devices compatible with modern semiconductor technology.

Chirality and magnetism of molecules are two properties that in the last years raised notable interest for the development of novel molecular devices. Chiral helicenes combine these functionalities, and their nanostructuration is the first step toward developing new multifunctional devices. Here, we present a novel assembling strategy to deposit a sub‐monolayer of enantiopure thia[4]helicene radical cations on a pre‐functionalized Au(111) substrate permitting the persistence of both the paramagnetic character and chirality of these molecules at the nanoscale. In‐house characterizations demonstrated the retention of the chemical and paramagnetic properties after the deposition process. Furthermore, synchrotron‐based X‐ray natural circular dichroism confirmed that the handedness of the thia[4]helicene is preserved on the surface.

The advent of topological semimetals enables the exploitation of symmetry-protected
topological phenomena and quantized transport. Here, we present homogeneous rectifiers,
converting high-frequency electromagnetic energy into direct current, based on low-energy
Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the
first implementation. Explicitly, these devices display room-temperature photosensitivity as
high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of
22, originating from the interplay between the spin-polarized surface and bulk states. Device
performances in terms of broadband operation, high dynamic range, as well as their high
sensitivity, validate the immense potential and unique advantages associated to the control of
nonequilibrium gapless topological states via built-in electric field, electromagnetic polar-
ization and symmetry breaking in topological semimetals. These findings pave the way for the
exploitation of topological phase of matter for high-frequency operations in polarization-
sensitive sensing, communications and imaging.

Chiral crystal YbNi3Ga9 is known as an intermediate valence compound in which a strong hybridization between the 4f orbitals and the conduction band is present. The Co-substitution to YbNi3Ga9 works as a hole doping that reduces the Kondo temperature and enhances the effective mass of itinerant charge carriers. Using angle-resolved photoelectron spectroscopy, the complex band structure of Yb(Ni1−xCox)3Ga9 (x=0,0.1) is revealed. A Yb2+ 4f7/2 band and evidences of hybridization to valence bands are found near the Fermi level. Both YbNi3Ga9 and the Co-substituted compound exhibit double hexagonal Fermi surfaces centered at the Γ¯-point, surrounded by a large snowflake-like surface, and a triangular electron-like surface along the Γ¯M¯ direction. By changing the incident photon energy, the band dispersion along the c-axis and the barrel-shaped Fermi surface is observed.

We predict NiTe2 to be a type-II Dirac semimetal based on ab initio calculations and explore its bulk and spin-polarized surface states using spin- and angle-resolved photoemission spectroscopy (spin-ARPES). Our results show that, unlike PtTe2, PtSe2, and PdTe2, the Dirac node in NiTe2 is located in close vicinity to the Fermi energy. Additionally, NiTe2 also hosts a pair of band inversions below the Fermi level along the Γ−A high-symmetry direction, with one of them leading to a Dirac cone in the surface states. The bulk Dirac nodes and the ladder of band inversions in NiTe2 support unique topological surface states with chiral spin texture over a wide range of energies. Our work paves the way for the exploitation of the low-energy type-II Dirac fermions in NiTe2 in the fields of spintronics, infrared plasmonics, and ultrafast optoelectronics.

Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.

The layered van der Waals antiferromagnet MnBi2Te4 has been predicted to combine the band ordering of archetypical topological insulators such as Bi2Te3 with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi2Te4(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.

The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.