VO2 is one of the most studied vanadium oxides because it undergoes a reversible metal-insulator transition (MIT) upon heating with a critical temperature of around 340 K. One of the most overlooked aspects of VO2 is the band’s anisotropy in the metallic phase when the Fermi level is crossed by two bands: π* and d||. They are oriented perpendicularly in one respect to the other, hence generating anisotropy. One of the parameters tuning MIT properties is the unbalance of the electron population of π* and d|| bands that arise from their different energy position with respect to the Fermi level. In systems with reduced dimensionality, the electron population disproportion is different with respect to the bulk leading to a different anisotropy. Investigating such a system with a band-selective spectroscopic tool is mandatory. In this manuscript, we show the results of the investigation of a single crystalline 8 nm VO2/TiO2(101) film. We report on the effectiveness of linearly polarized resonant photoemission (ResPES) as a band-selective technique probing the intrinsic anisotropy of VO2.
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Phys. Rev. Materials, 5, 104403, (2021)
Identification of hidden orbital contributions in the La0.65Sr0.35MnO3 valence band
F. Offi, K. Yamauchi, S. Picozzi, V. Lollobrigida, A. Verna, C. Schlueter, T.-L. Lee, A. Regoutz, D. J. Payne, A. Petrov, G. Vinai, G. M. Pierantozzi, T. Pincelli, G. Panaccione, and F. Borgatti
Hybridization of electronic states and orbital symmetry in transition metal oxides are generally considered key ingredients in the description of both their electronic and magnetic properties. In the prototypical case of La0.65Sr0.35MnO3 (LSMO), a landmark system for spintronics applications, a description based solely on Mn 3d and O 2p electronic states is reductive. We thus analyzed elemental and orbital distributions in the LSMO valence band through a comparison between density functional theory calculations and experimental photoelectron spectra in a photon energy range from soft to hard x rays. We reveal a number of hidden contributions, arising specifically from La 5p, Mn 4s, and O 2s orbitals, considered negligible in previous analyses; our results demonstrate that all these contributions are significant for a correct description of the valence band of LSMO and of transition metal oxides in general.
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J. Vac. Sci. Technol. B, 37, 061209, (2019)
Transparent conductive oxide-based architectures for the electrical modulation of the optical response: A spectroscopic ellipsometry study
M. Sygletou, F. Bisio, S. Benedetti, P. Torelli, A. di Bona, A. Petrov, and M. Canepa
Transparent conductive oxides are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent conductive electrodes in solar cells and interesting for optoelectronic and infrared-plasmonic applications. One of the new challenges that researchers and engineers are facing is merging optical and electrical control in a single device for developing next-generation photovoltaic, optoelectronic devices and energy-efficient solid-state lighting. In this work, the authors investigated the possible variations in the dielectric properties of aluminum-doped ZnO (AZO) upon gating by means of spectroscopic ellipsometry (SE). The authors investigated the electrical-bias-dependent optical response of thin AZO films fabricated by magnetron sputtering within a parallel-plane capacitor configuration. The authors address the possibility to control their optical and electric performances by applying bias, monitoring the effect of charge injection/depletion in the AZO layer by means of in operando SE versus applied gate voltage.
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J. Appl. Phys., 123, 123901, (2018)
X-ray absorption spectroscopy study of annealing process on Sr1–xLaxCuO2 electron-doped cuprate thin films
A. Galdi, P. Orgiani, C. Sacco, B. Gobaut, P. Torelli, C. Aruta, N.B. Brookes, M. Minola, J.W. Harter, K.M. Shen, D.G. Schlom, and L. Maritato
The superconducting properties of Sr1–xLaxCuO2 thin films are strongly affected by sample preparation procedures, including the annealing step, which are not always well controlled. We have studied the evolution of Cu L2,3 and O K edge x-ray absorption spectra (XAS) of Sr1–xLaxCuO2 thin films as a function of reducing annealing, both qualitatively and quantitatively. By using linearly polarized radiation, we are able to identify the signatures of the presence of apical oxygen in the as-grown sample and its gradual removal as a function of duration of 350 °C Ar annealing performed on the same sample. Even though the as-grown sample appears to be hole doped, we cannot identify the signature of the Zhang-Rice singlet in the O K XAS, and it is extremely unlikely that the interstitial excess oxygen can give rise to a superconducting or even a metallic ground state. XAS and x-ray linear dichroism analyses are, therefore, shown to be valuable tools to improving the control over the annealing process of electron doped superconductors.
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Langmuir, 34, 3604-3609, (2018)
Opposite Surface and Bulk Solvatochromic Effects in a Molecular Spin-Crossover Compound Revealed by Ambient Pressure X-ray Absorption Spectroscopy
F. Borgatti, P. Torelli, M. Brucale, D. Gentili, G. Panaccione, C. Castan-Guerrero, B. Schäfer, M. Ruben and M. Cavallini
We investigate the solvatochromic effect of a Fe-based spin-crossover (SCO) compound via ambient pressure soft X-ray absorption spectroscopy (AP-XAS) and atomic force microscopy (AFM). AP-XAS provides the direct evidence of the spin configuration for the Fe(II) 3d states of the SCO material upon in situ exposure to specific gas or vapor mixtures; concurrent changes in nanoscale topography and mechanical characteristics are revealed via AFM imaging and AFM-based force spectroscopy, respectively. We find that exposing the SCO material to gaseous helium promotes an effective decrease of the transition temperature of its surface layers, while the exposure to methanol vapor causes opposite surfacial and bulk solvatochromic effects. Surfacial solvatochromism is accompanied by a dramatic reduction of the surface layers stiffness. We propose a rationalization of the observed effects based on interfacial dehydration and solvation phenomena.
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Phys. Chem. Chem. Phys., 19, 29364, (2017)
Spectroscopic identification of the chemical interplay between defects and dopants in Al-doped ZnO
S. Benedetti, I. Valenti, A. di Bona, G. Vinai, C. Castan-Guerrero, S. Valeri, A. Catellani, A. Ruini, P. Torelli and A. Calzolari
The conduction and optoelectronic properties of transparent conductive oxides can be largely modified by intentional inclusion of dopants over a very large range of concentrations. However, the simultaneous presence of structural defects results in an unpredictable complexity that prevents a clear identification of chemical and structural properties of the final samples. By exploiting the unique chemical sensitivity of Hard X-ray Photoelectron Spectra and Near Edge X-ray Absorption Fine Structure in combination with Density Functional Theory, we determine the contribution to the spectroscopic response of defects in Al-doped ZnO films. Satellite peaks in O1s and modifications at the O K-edge allow the determination of the presence of H embedded in ZnO and the very low concentration of Zn vacancies and O interstitials in undoped ZnO. Contributions coming from substitutional and (above the solubility limit) interstitial Al atoms have been clearly identified and have been related to changes in the oxide stoichiometry and increased oxygen coordination, together with small lattice distortions. In this way defects and doping in oxide films can be controlled, in order to tune their properties and improve their performances.
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Catal. Sci. Technol., 7, 4162, (2017)
The effect of surface chemistry on the performances of Pd-based catalysts supported on activated carbons
A. Lazzarini, R. Pellegrini, A. Piovano, S. Rudić, C. Castan-Guerrero, P. Torelli, M.R. Chierotti, R. Gobetto, C. Lamberti and E. Groppo
In this work we investigated in detail the effects of nitric acid on the surface chemistry of two carbons, activated by steam and by phosphoric acid, meant to identify the nature and the concentration of the oxidized surface species. To this aim, the oxidized carbons were characterized by means of a large number of complementary techniques, including micro-Raman spectroscopy, N2 physisorption, Boehm titration method, 13C solid state nuclear magnetic resonance, X-ray photoelectron spectroscopy, diffuse reflectance infrared and inelastic neutron scattering spectroscopy. Carboxylic and carboxylate groups are mainly formed, the latter stabilized by the extended conjugation of the π electrons and being more abundant on small and irregular graphitic platelets. We demonstrated that the presence of oxygen-containing groups acts against the palladium dispersion and causes the appearance of an appreciable induction time in hydrogenation reactions. The carbon with more oxygenated surface species (and in particular more carboxylate groups) must be chosen in the hydrogenation of polar substrates, while it is detrimental to the hydrogenation of nonpolar substrates.
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Adv. Funct. Mat., 26, 507, (2015)
Role and Optimization of the Active Oxide Layer in TiO2-Based RRAM
A. Regoutz, I. Gupta, A. Serb, A. Khiat, F. Borgatti, T.‐L. Lee, C. Schlueter, P. Torelli, B. Gobaut, M. Light, D. Carta, S. Pearce, G. Panaccione, T. Prodromakis
TiO2 is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.
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Dalton Trans., 45, 134-143, (2015)
Surface induces different crystal structures in a room temperature switchable spin crossover compound
D. Gentili, F. Liscio, N. Demitri, B. Schäfer, F. Borgatti, P. Torelli, B. Gobaut, G. Panaccione, G. Rossi, A. Degli Esposti, M. Gazzano, S. Milita, I. Bergenti, G. Ruani, I. Šalitroš, M. Rubendi and M. Cavallini
We investigated the influence of surfaces in the formation of different crystal structures of a spin crossover compound, namely [Fe(L)2] (LH: (2-(pyrazol-1-yl)-6-(1H-tetrazol-5-yl)pyridine), which is a neutral compound thermally switchable around room temperature. We observed that the surface induces the formation of two different crystal structures, which exhibit opposite spin transitions, i.e. on heating them up to the transition temperature, one polymorph switches from high spin to low spin and the second polymorph switches irreversibly from low spin to high spin. We attributed this inversion to the presence of water molecules H-bonded to the complex tetrazolyl moieties in the crystals. Thin deposits were investigated by means of polarized optical microscopy, atomic force microscopy, X-ray diffraction, X-ray absorption spectroscopy and micro Raman spectroscopy; moreover the analysis of the Raman spectra and the interpretation of spin inversion were supported by DFT calculations.
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Angew. Chem. Int. Ed., 54, 12976, (2015)
Reversible Photoswitching of a Spin-Crossover Molecular Complex in the Solid State at Room Temperature
B. Rösner, M. Milek, A. Witt, B. Gobaut, P. Torelli, R.H. Fink, M.M. Khusniyarov
Spin-crossover metal complexes are highly promising magnetic molecular switches for prospective molecule-based devices. The spin-crossover molecular photoswitches developed so far operate either at very low temperatures or in the liquid phase, which hinders practical applications. Herein, we present a molecular spin-crossover iron(II) complex that can be switched between paramagnetic high-spin and diamagnetic low-spin states with light at room temperature in the solid state. The reversible photoswitching is induced by alternating irradiation with ultraviolet and visible light and proceeds at the molecular level.
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