Giancarlo Panaccione has a Permanent Position as beamline scientist of the APE beamline at INFM (now CNR) since 1998 (Senior Researcher since 2011) and is responsible of the SPRINT Laboratory high harmonic generation beamline. His present research interests are focused on the electronic and magnetic properties of quantum materials and nanomaterials. In particular, the activity is focused on achieving control of these properties via external tuning parameters, growth and fabrication of nanoscale heterostructures, possibly leading to new applications in quantum electronics and spintronics. His research activity is mostly devoted to the exploitation of Synchrotron Radiation spectroscopies for the study of correlated systems and novel quantum materials, following three main axes: (1) electronic and magnetic properties of low dimensional sys- tems (surfaces and interfaces), (2) electron confinement, and (3) complex oxides.
1995 - Ph.D. in Material Science at the Université Pierre-et-Marie-Curie Paris-IV, France
We unravel the interplay of topological properties and the layered (anti)ferromagnetic ordering in EuSn2P2, using spin and chemical selective electron and X-ray spectroscopies supported by first-principle calculations. We reveal the presence of in-plane long-range ferromagnetic order triggering topological invariants and resulting in the multiple protection of topological Dirac states. We provide clear evidence that layer-dependent spin-momentum locking coexists with ferromagnetism in this material, a cohabitation that promotes EuSn2P2 as a prime candidate axion insulator for topological antiferromagnetic spintronics applications.
V2O3 has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by means of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk V2O3. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition in V2O3 by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of V2O3 thin films in device-oriented heterostructures.
The role of X-ray based electron spectroscopies in determining chemical, electronic, and magnetic properties of solids has been well-known for several decades. A powerful approach is angle-resolved photoelectron spectroscopy, whereby the kinetic energy and angle of photoelectrons emitted from a sample surface are measured. This provides a direct measurement of the electronic band structure of crystalline solids. Moreover, it yields powerful insights into the electronic interactions at play within a material and into the control of spin, charge, and orbital degrees of freedom, central pillars of future solid state science. With strong recent focus on research of lower-dimensional materials and modified electronic behavior at surfaces and interfaces, angle-resolved photoelectron spectroscopy has become a core technique in the study of quantum materials. In this review, we provide an introduction to the technique. Through examples from several topical materials systems, including topological insulators, transition metal dichalcogenides, and transition metal oxides, we highlight the types of information which can be obtained. We show how the combination of angle, spin, time, and depth-resolved experiments are able to reveal “hidden” spectral features, connected to semiconducting, metallic and magnetic properties of solids, as well as underlining the importance of dimensional effects in quantum materials.