Chiara Bigi worked within NFFA-Trieste as University of Milan PhD student and CNR-IOM Post-doc from October 2019 to August 2020.
She is currently working as Research Fellow in Experimental Condensed Matter Physics at University of St Andrews, Scotland.
Chiara Bigi's research interests were mainly focused on the investigation of the electronic and spin properties of topological insulators, both single crystal and thin films, and 2D systems. During her master thesis she contributed to technical test and characterization of VLEED spectrometers of the new SP-ARPES device at APE-NFFA beamline and was involved in the study of electronic properties of both Bi2Se3 and oxides thin films grown in-situ by Pulsed Laser Deposition.
Probing the energy and spin electron properties of materials by means of photoemission spectroscopy gives insights into the low-energy phenomena of matter driven by spin orbit coupling or exchange interaction. The information that can be derived from complete photoelectron spectroscopy experiments, beyond E(k), is contained in the photoemission transition matrix elements that determine peak intensities. We present here a complete photoemission study of the spin-polarized bands of 2H−NbSe2, a material that presents a surface spin-texture. Circular dichroism in angular-resolved photoemission spectroscopy (CD-ARPES) data are compared with spin-polarized angular-resolved spectra (SARPES) as measured with linearly polarized radiation in a well-characterized experimental chirality, at selected photon energy values. CD-ARPES is due to a matrix element effect that depends strongly on photon energy and experimental geometry: we show that it cannot be used to infer intrinsic spin properties in 2H−NbSe2. On the other hand, SARPES data provide reliable direct information on the spin properties of the electron states. The results on 2H−NbSe2 are discussed, and general methodological conclusions are drawn on the best experimental approach to the determination of the spin texture of quantum materials.
J. Electron Spectros. Relat. Phenomena, 245, 147016, (2020)
Predominance of z(2)-orbitals at the surface of both hole- and electron-doped manganites
C. Bigi, S.K. Chaluvadi, A. Galdi, L. Maritato, C. Aruta, R. Ciancio, J. Fujii, B. Gobaut, P. Torelli, I. Vobornik, G. Panaccione, G. Rossi, P. Orgiani
The electronic properties of hole- and electron-doped manganites were probed by a combination of x-ray absorption and photoemission spectroscopies. Hole-doped La0.7Ba0.3MnO3 and electron-doped La0.7Ce0.3MnO3 thin films were epitaxially grown on SrTiO3 substrates by means of pulsed laser deposition. Ex-situ x-ray diffraction demonstrated the substrate/film epitaxy relation and in-situ low energy electron diffraction provided evidence of high structural order of film surfaces. By combining synchrotron x-ray absorption and x-ray photoemission spectroscopy, evidence of Mn ions into a 2+ state as a result of the Ce substitution in the electron-doped manganites was provided. Angular resolved photo-emission spectroscopy (ARPES) results showed a predominance of z2-orbitals at the surface of both hole- and, unexpectedly, electron-doped manganites thus questioning the validity of the commonly accepted scenario describing the electron filling in manganites’ 3d orbitals in oxide manganites. The precise determination of the electronic and orbital properties of the terminating layers of oxide manganites paves the way for engineering multi-layered heterostructures thus leading to novel opportunities in the field of quantum electronics.
Phys. Rev. Materials, 4, 025801, (2020)
Distinct behavior of localized and delocalized carriers in anatase TiO2 (001) during reaction with O2
C. Bigi, Z. Tang, G.M. Pierantozzi, P. Orgiani, P. K. Das, J. Fujii, I. Vobornik, T. Pincelli, A. Troglia, T.-L. Lee, R. Ciancio, G. Drazic, A. Verdini, A. Regoutz, P.D.C. King, D. Biswas, G. Rossi, G. Panaccione, and A. Selloni
Two-dimensional (2D) metallic states induced by oxygen vacancies (VOs) at oxide surfaces and interfaces provide opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used angle resolved photoelectron spectroscopy combined with density-functional theory (DFT) to study the reactivity of VO-induced states at the (001) surface of anatase TiO2, where both 2D metallic and deeper lying in-gap states (IGs) are observed. The 2D and IG states exhibit remarkably different evolutions when the surface is exposed to molecular O2: while IGs are almost completely quenched, the metallic states are only weakly affected. DFT calculations indeed show that the IGs originate from surface VOs and remain localized at the surface, where they can promptly react with O2. In contrast, the metallic states originate from subsurface vacancies whose migration to the surface for recombination with O2 is kinetically hindered on anatase TiO2 (001), thus making them much less sensitive to oxygen dosing.
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(Università di Milano and IOM-CNR).