The search for new strategies to write magnetic information is a crucial issue for the development of high density and low power consumption electronics. In this context, different approach for writing and reading magnetic information are currently explored: from the use of spin polarized currents in magneto-tunnel junction to the use of electric fields on multiferroics material passing from the mechanical stress of magnetostrictive layers all these approaches present advantages and drawbacks that are nowadays under the scrutiny of the research community. In our laboratory we adopt a multitechnique investigation methodology to study the properties of magnetic information devices which comprises: the growth of the materials, the characterization of the magnetic properties by magneto optical kerr effect, the study of its electronic properties by x-ray spectroscopy, the fabrication of the device and the demonstration of its functionality. In this way we obtain a complete characterization of the device and we can therefore optimize the material properties in view of boosting the performances of the system. During the stage in our laboratory the student will carry on a study on one of the following topic: magnetotunnel junction or ferromagnetic oxide.