The doping of metal oxides is an interesting route to increase catalyst activity and lower activation temperatures in H2 dissociation to replace Pt in catalysts for electrochemical devices. In this process, the roles of both the matrix and dopant cations are fundamental to understanding and designing more efficient catalysts. In this work, we have investigated the reduction process in pure and doped CeO2 films. We followed the oxidation states of Ce and dopants (Cu and Fe) during H2 exposure at ambient pressure by combining X-ray absorption spectroscopy and gas chromatography on 5 nm films in the temperature range of 300–620 K. We have observed that Cu doping (at concentrations of 5 and 14 at. %) promotes the ceria reduction, while the addition of Fe seems to have a limited impact on the oxide chemical reactivity only at low temperatures. Moreover, thanks to the chemical sensitivity of operando X-ray absorption spectroscopy, we were able to follow simultaneously the evolution of Ce and Cu oxidation states during the reaction, which has permitted to identify two distinct reduction processes taking place above and below 500 K. These measurements show that at low temperatures, the H2 dissociation takes place at the Cu1+ sites, thus explaining the higher reactivity of the Cu-doped samples. The described mechanism can help in the design of Pt-free catalysts with enhanced performances.
Our Research
Rev. Sci. Instrum., 89, 054101, (2018)
A reaction cell for ambient pressure soft x-ray absorption spectroscopy
C. Castán-Guerrero, D. Krizmancic, V. Bonanni, R. Edla, A. Deluisa, F. Salvador, G. Rossi, G. Panaccione, and P. Torelli
We present a new experimental setup for performing X-ray Absorption Spectroscopy (XAS) in the soft X-ray range at ambient pressure. The ambient pressure XAS setup is fully compatible with the ultra high vacuum environment of a synchrotron radiation spectroscopy beamline end station by means of ultrathin Si3N4 membranes acting as windows for the X-ray beam and seal of the atmospheric sample environment. The XAS detection is performed in total electron yield (TEY) mode by probing the drain current from the sample with a picoammeter. The high signal/noise ratio achievable in the TEY mode, combined with a continuous scanning of the X-ray energies, makes it possible recording XAS spectra in a few seconds. The first results show the performance of this setup to record fast XAS spectra from sample surfaces exposed at atmospheric pressure, even in the case of highly insulating samples. The use of a permanent magnet inside the reaction cell enables the measurement of X-ray magnetic circular dichroism at ambient pressure.
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Langmuir, 34, 3604-3609, (2018)
Opposite Surface and Bulk Solvatochromic Effects in a Molecular Spin-Crossover Compound Revealed by Ambient Pressure X-ray Absorption Spectroscopy
F. Borgatti, P. Torelli, M. Brucale, D. Gentili, G. Panaccione, C. Castan-Guerrero, B. Schäfer, M. Ruben and M. Cavallini
We investigate the solvatochromic effect of a Fe-based spin-crossover (SCO) compound via ambient pressure soft X-ray absorption spectroscopy (AP-XAS) and atomic force microscopy (AFM). AP-XAS provides the direct evidence of the spin configuration for the Fe(II) 3d states of the SCO material upon in situ exposure to specific gas or vapor mixtures; concurrent changes in nanoscale topography and mechanical characteristics are revealed via AFM imaging and AFM-based force spectroscopy, respectively. We find that exposing the SCO material to gaseous helium promotes an effective decrease of the transition temperature of its surface layers, while the exposure to methanol vapor causes opposite surfacial and bulk solvatochromic effects. Surfacial solvatochromism is accompanied by a dramatic reduction of the surface layers stiffness. We propose a rationalization of the observed effects based on interfacial dehydration and solvation phenomena.
From our users
Phys. Chem. Chem. Phys., 19, 29364, (2017)
Spectroscopic identification of the chemical interplay between defects and dopants in Al-doped ZnO
S. Benedetti, I. Valenti, A. di Bona, G. Vinai, C. Castan-Guerrero, S. Valeri, A. Catellani, A. Ruini, P. Torelli and A. Calzolari
The conduction and optoelectronic properties of transparent conductive oxides can be largely modified by intentional inclusion of dopants over a very large range of concentrations. However, the simultaneous presence of structural defects results in an unpredictable complexity that prevents a clear identification of chemical and structural properties of the final samples. By exploiting the unique chemical sensitivity of Hard X-ray Photoelectron Spectra and Near Edge X-ray Absorption Fine Structure in combination with Density Functional Theory, we determine the contribution to the spectroscopic response of defects in Al-doped ZnO films. Satellite peaks in O1s and modifications at the O K-edge allow the determination of the presence of H embedded in ZnO and the very low concentration of Zn vacancies and O interstitials in undoped ZnO. Contributions coming from substitutional and (above the solubility limit) interstitial Al atoms have been clearly identified and have been related to changes in the oxide stoichiometry and increased oxygen coordination, together with small lattice distortions. In this way defects and doping in oxide films can be controlled, in order to tune their properties and improve their performances.
Our Research
J. Phys.: Conf. Ser., 903, 012061, (2017)
Influence of Mn diffusion on IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers
G. Vinai, L. Frangou, C. Castan-Guerrero, V. Bonanni, B. Gobaut, S. Auffret, I.L. Prejbeanu, B. Dieny, V. Baltz and P. Torelli
In this work, we studied the influence of the buffer layer composition on the IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers. By means of magnetometry, x-ray absorption and x-ray photoelectron spectroscopy, we investigated the magnetic and chemical properties of the stacks. We demonstrated a higher diffusion of Mn through the Co layer in the case of a Cu buffer layer. This is consistent with the observation of larger IrMn thickness threshold for the onset of exchange bias.
From our users
Catal. Sci. Technol., 7, 4162, (2017)
The effect of surface chemistry on the performances of Pd-based catalysts supported on activated carbons
A. Lazzarini, R. Pellegrini, A. Piovano, S. Rudić, C. Castan-Guerrero, P. Torelli, M.R. Chierotti, R. Gobetto, C. Lamberti and E. Groppo
In this work we investigated in detail the effects of nitric acid on the surface chemistry of two carbons, activated by steam and by phosphoric acid, meant to identify the nature and the concentration of the oxidized surface species. To this aim, the oxidized carbons were characterized by means of a large number of complementary techniques, including micro-Raman spectroscopy, N2 physisorption, Boehm titration method, 13C solid state nuclear magnetic resonance, X-ray photoelectron spectroscopy, diffuse reflectance infrared and inelastic neutron scattering spectroscopy. Carboxylic and carboxylate groups are mainly formed, the latter stabilized by the extended conjugation of the π electrons and being more abundant on small and irregular graphitic platelets. We demonstrated that the presence of oxygen-containing groups acts against the palladium dispersion and causes the appearance of an appreciable induction time in hydrogenation reactions. The carbon with more oxygenated surface species (and in particular more carboxylate groups) must be chosen in the hydrogenation of polar substrates, while it is detrimental to the hydrogenation of nonpolar substrates.
Our Research
AIP Advances, 5, 127128, (2015)
Magnetoresistance of galfenol-based magnetic tunnel junction
B. Gobaut, G. Vinai, C. Castan-Guerrero, D. Krizmancic, H. Rafaqat, S. Roddaro, G. Rossi, G. Panaccione, M. Eddrief, M. Marangolo, and P. Torelli
The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.
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